English
简体中文
MEMS OSC XO 33.3333MHZ CMOS SMD
MOSFET N-CH 75V 60A 10POLARPAK
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | TrenchFET® |
| 包裹: | Tape & Reel (TR)Cut Tape (CT) |
| 零件状态: | Active |
| 场效应管类型: | N-Channel |
| 技术: | MOSFET (Metal Oxide) |
| 漏源电压 (vdss): | 75 V |
| 电流 - 连续漏极 (id) @ 25°c: | 60A (Tc) |
| 驱动电压（最大 rds on，最小 rds on）: | 4.5V, 10V |
| rds on (max) @ id, vgs: | 9.5mOhm @ 16A, 10V |
| vgs(th) (最大值) @ id: | 3V @ 250µA |
| 栅极电荷 (qg) (max) @ vgs: | 95 nC @ 10 V |
| vgs (最大值): | ±20V |
| 输入电容 (ciss) (max) @ vds: | 3200 pF @ 38 V |
| 场效应管特征: | - |
| 功耗（最大值）: | 5.2W (Ta), 125W (Tc) |
| 工作温度: | -55°C ~ 150°C (TJ) |
| 安装类型: | Surface Mount |
| 供应商设备包: | 10-PolarPAK® (L) |
| 包/箱: | 10-PolarPAK® (L) |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
HAT2279N-EL-ERochester Electronics |
MOSFET N-CH 80V 30A 8LFPAK |
|
BSC009NE2LS5IATMA1IR (Infineon Technologies) |
MOSFET N-CH 25V 40A/100A TDSON |
|
FQPF11N40CSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 400V 10.5A TO220F |
|
FDG316PRochester Electronics |
SMALL SIGNAL FIELD-EFFECT TRANSI |
|
MTB60N05HDLT4Rochester Electronics |
N-CHANNEL POWER MOSFET |
|
HUFA75344P3_NLRochester Electronics |
N-CHANNEL POWER MOSFET |
|
IXFA10N60PWickmann / Littelfuse |
MOSFET N-CH 600V 10A TO263 |
|
PSMN026-80YS,115Nexperia |
MOSFET N-CH 80V 34A LFPAK56 |
|
IPD70P04P409ATMA2IR (Infineon Technologies) |
MOSFET P-CH 40V 73A TO252-3 |
|
IPB70N10SL16ATMA1IR (Infineon Technologies) |
MOSFET N-CH 100V 70A TO263-3 |
|
BUK624R5-30C,118Rochester Electronics |
PFET, 90A I(D), 30V, 0.0075OHM, |
|
TK72A08N1,S4XToshiba Electronic Devices and Storage Corporation |
MOSFET N-CH 75V 80A TO220SIS |
|
PMN230ENEXNexperia |
MOSFET N-CH 60V 1.6A 6TSOP |