English
简体中文
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | POWER MOS 8™ |
| 包裹: | Tube |
| 零件状态: | Active |
| 场效应管类型: | N-Channel |
| 技术: | MOSFET (Metal Oxide) |
| 漏源电压 (vdss): | 600 V |
| 电流 - 连续漏极 (id) @ 25°c: | 60A (Tc) |
| 驱动电压（最大 rds on，最小 rds on）: | 10V |
| rds on (max) @ id, vgs: | 110mOhm @ 28A, 10V |
| vgs(th) (最大值) @ id: | 5V @ 2.5mA |
| 栅极电荷 (qg) (max) @ vgs: | 280 nC @ 10 V |
| vgs (最大值): | ±30V |
| 输入电容 (ciss) (max) @ vds: | 11300 pF @ 25 V |
| 场效应管特征: | - |
| 功耗（最大值）: | 1040W (Tc) |
| 工作温度: | -55°C ~ 150°C (TJ) |
| 安装类型: | Through Hole |
| 供应商设备包: | TO-264 [L] |
| 包/箱: | TO-264-3, TO-264AA |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
SQ2362ES-T1_BE3Vishay / Siliconix |
MOSFET N-CH 60V 4.3A SOT23-3 |
|
IRFR220NPBFRochester Electronics |
MOSFET N-CH 200V 5A DPAK |
|
STFI10N65K3STMicroelectronics |
MOSFET N-CH 650V 10A I2PAKFP |
|
SISS63DN-T1-GE3Vishay / Siliconix |
MOSFET P-CH 20V 35.1/127.5A PPAK |
|
IXFX230N20TWickmann / Littelfuse |
MOSFET N-CH 200V 230A PLUS247-3 |
|
AUIRF2903ZSTRLIR (Infineon Technologies) |
MOSFET N-CH 30V 160A D2PAK |
|
SIA459EDJ-T1-GE3Vishay / Siliconix |
MOSFET P-CH 20V 9A PPAK SC70-6 |
|
2SK1427Rochester Electronics |
N-CHANNEL POWER MOSFET |
|
NP80N04NHE-S18-AYRochester Electronics |
MOSFET N-CH 40V 80A TO262 |
|
DMP4025SFGQ-13Zetex Semiconductors (Diodes Inc.) |
MOSFET P-CH 40V 7.2A PWRDI3333-8 |
|
STB40N60M2STMicroelectronics |
MOSFET N-CH 600V 34A D2PAK |
|
IPA030N10N3GXKSA1IR (Infineon Technologies) |
MOSFET N-CH 100V 79A TO220-FP |
|
IXTT75N10Wickmann / Littelfuse |
MOSFET N-CH 100V 75A TO268 |
