类型 | 描述 |
---|---|
系列: | - |
包裹: | Tape & Reel (TR) |
零件状态: | Active |
场效应管类型: | P-Channel |
技术: | MOSFET (Metal Oxide) |
漏源电压 (vdss): | 40 V |
电流 - 连续漏极 (id) @ 25°c: | 13A (Ta) |
驱动电压(最大 rds on,最小 rds on): | 10V |
rds on (max) @ id, vgs: | 15mOhm @ 12A, 10V |
vgs(th) (最大值) @ id: | 2.5V @ 250µA |
栅极电荷 (qg) (max) @ vgs: | - |
vgs (最大值): | ±20V |
输入电容 (ciss) (max) @ vds: | 2800 pF @ 20 V |
场效应管特征: | - |
功耗(最大值): | 2.5W (Ta) |
工作温度: | -55°C ~ 150°C (TJ) |
安装类型: | Surface Mount |
供应商设备包: | 8-SOP |
包/箱: | 8-SOIC (0.154", 3.90mm Width) |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
BTS132Rochester Electronics |
N-CHANNEL POWER MOSFET |
|
DI020N06D1Diotec Semiconductor |
MOSFET N-CH 60V 20A TO252-3 DPAK |
|
SISH472DN-T1-GE3Vishay / Siliconix |
MOSFET N-CH 30V 15A/20A PPAK |
|
SQS415ENW-T1_GE3Vishay / Siliconix |
MOSFET P-CH 40V 16A PPAK1212-8W |
|
PSMN8R5-100PS127Rochester Electronics |
N-CHANNEL POWER MOSFET |
|
SQM110N05-06L_GE3Vishay / Siliconix |
MOSFET N-CH 55V 110A TO263 |
|
STFW69N65M5STMicroelectronics |
MOSFET N-CH 650V 58A ISOWATT |
|
SIA813DJ-T1-GE3Vishay / Siliconix |
MOSFET P-CH 20V 4.5A PPAK SC70-6 |
|
NTB12N50Rochester Electronics |
N-CHANNEL POWER MOSFET |
|
FQI12N60CTURochester Electronics |
MOSFET N-CH 600V 12A I2PAK |
|
IPZA60R060P7XKSA1IR (Infineon Technologies) |
MOSFET N-CH 600V 48A TO247-4 |
|
SFS9634Rochester Electronics |
P-CHANNEL POWER MOSFET |
|
PMZ290UNE2YLNexperia |
MOSFET N-CH 20V 1.2A DFN1006-3 |