English
简体中文
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | - |
| 包裹: | Tape & Reel (TR)Cut Tape (CT) |
| 零件状态: | Active |
| 场效应管类型: | N-Channel |
| 技术: | MOSFET (Metal Oxide) |
| 漏源电压 (vdss): | 20 V |
| 电流 - 连续漏极 (id) @ 25°c: | 1.2A (Ta) |
| 驱动电压（最大 rds on，最小 rds on）: | 1.5V, 4.5V |
| rds on (max) @ id, vgs: | 320mOhm @ 1.2A, 4.5V |
| vgs(th) (最大值) @ id: | 950mV @ 250µA |
| 栅极电荷 (qg) (max) @ vgs: | 1.4 nC @ 4.5 V |
| vgs (最大值): | ±8V |
| 输入电容 (ciss) (max) @ vds: | 46 pF @ 10 V |
| 场效应管特征: | - |
| 功耗（最大值）: | 350mW (Ta), 5.43W (Tc) |
| 工作温度: | -55°C ~ 150°C (TJ) |
| 安装类型: | Surface Mount |
| 供应商设备包: | DFN1006-3 |
| 包/箱: | SC-101, SOT-883 |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
FQP6N50Rochester Electronics |
MOSFET N-CH 500V 5.5A TO220-3 |
|
RQ5P010SNTLROHM Semiconductor |
MOSFET N-CH 100V 1A TSMT3 |
|
FDN302PSanyo Semiconductor/ON Semiconductor |
MOSFET P-CH 20V 2.4A SUPERSOT3 |
|
FQI3N25TURochester Electronics |
MOSFET N-CH 250V 2.8A I2PAK |
|
FDD7030BLRochester Electronics |
MOSFET N-CH 30V 14A/56A DPAK |
|
SI3443BDV-T1-BE3Vishay / Siliconix |
MOSFET P-CH 20V 3.6A 6TSOP |
|
FDD850N10LDRochester Electronics |
MOSFET N-CH 100V 15.3A TO252-4 |
|
IRLIZ44NPBFRochester Electronics |
MOSFET N-CH 55V 30A TO220 |
|
BB502CBS-TL-HRochester Electronics |
RF N-CHANNEL MOSFET |
|
PMPB27EP,115Nexperia |
MOSFET P-CH 30V 6.1A DFN2020MD-6 |
|
DMTH43M8LFGQ-13Zetex Semiconductors (Diodes Inc.) |
MOSFET N-CH 40V PWRDI3333 |
|
2N7002,235Nexperia |
MOSFET N-CH 60V 300MA TO236AB |
|
SIJ420DP-T1-GE3Vishay / Siliconix |
MOSFET N-CH 20V 50A PPAK SO-8 |
