类型 | 描述 |
---|---|
系列: | TrenchMOS™ |
包裹: | Tape & Reel (TR)Cut Tape (CT) |
零件状态: | Active |
场效应管类型: | N-Channel |
技术: | MOSFET (Metal Oxide) |
漏源电压 (vdss): | 55 V |
电流 - 连续漏极 (id) @ 25°c: | 19A (Tc) |
驱动电压(最大 rds on,最小 rds on): | 5V, 10V |
rds on (max) @ id, vgs: | 70mOhm @ 10A, 10V |
vgs(th) (最大值) @ id: | 2V @ 1mA |
栅极电荷 (qg) (max) @ vgs: | 9.4 nC @ 5 V |
vgs (最大值): | ±15V |
输入电容 (ciss) (max) @ vds: | 650 pF @ 25 V |
场效应管特征: | - |
功耗(最大值): | 56W (Tc) |
工作温度: | -55°C ~ 175°C (TJ) |
安装类型: | Surface Mount |
供应商设备包: | D2PAK |
包/箱: | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
2SK4066-DL-ERochester Electronics |
MOSFET N-CH 60V 100A SMP-FD |
|
SIS472BDN-T1-GE3Vishay / Siliconix |
MOSFET N-CH 30V 15.3A/38.3A PPAK |
|
PHK5NQ15T,518Nexperia |
MOSFET N-CH 150V 5A 8SO |
|
IRF9540SPBFVishay / Siliconix |
MOSFET P-CH 100V 19A D2PAK |
|
TK6P60W,RVQToshiba Electronic Devices and Storage Corporation |
MOSFET N CH 600V 6.2A DPAK |
|
TK35E10K3(S1SS-Q)Toshiba Electronic Devices and Storage Corporation |
MOSFET N-CH 100V 35A TO-220AB |
|
SQ3481EV-T1_BE3Vishay / Siliconix |
MOSFET P-CHANNEL 30V 7.5A 6TSOP |
|
DMPH1006UPS-13Zetex Semiconductors (Diodes Inc.) |
MOSFET P-CH 12V 80A PWRDI5060-8 |
|
IRF7473TRPBFIR (Infineon Technologies) |
MOSFET N-CH 100V 6.9A 8SO |
|
ZXMN6A07ZTAZetex Semiconductors (Diodes Inc.) |
MOSFET N-CH 60V 1.9A SOT89-3 |
|
IPB120N08S404ATMA1Rochester Electronics |
MOSFET N-CH 80V 120A D2PAK |
|
IRLB8748PBFIR (Infineon Technologies) |
MOSFET N-CH 30V 92A TO220AB |
|
IPD65R250E6XTMA1Rochester Electronics |
IPD65R250 - COOLMOS N-CHANNEL |