FIXED IND 5.9NH 1.77A 40 MOHM
MOSFET N-CH 650V 7A TO252
类型 | 描述 |
---|---|
系列: | - |
包裹: | Tape & Reel (TR)Cut Tape (CT) |
零件状态: | Active |
场效应管类型: | N-Channel |
技术: | MOSFET (Metal Oxide) |
漏源电压 (vdss): | 650 V |
电流 - 连续漏极 (id) @ 25°c: | 7A (Tc) |
驱动电压(最大 rds on,最小 rds on): | 10V |
rds on (max) @ id, vgs: | 1.56Ohm @ 3.5A, 10V |
vgs(th) (最大值) @ id: | 4.5V @ 250µA |
栅极电荷 (qg) (max) @ vgs: | 24 nC @ 10 V |
vgs (最大值): | ±30V |
输入电容 (ciss) (max) @ vds: | 1180 pF @ 25 V |
场效应管特征: | - |
功耗(最大值): | 178W (Tc) |
工作温度: | -50°C ~ 150°C (TJ) |
安装类型: | Surface Mount |
供应商设备包: | TO-252, (D-Pak) |
包/箱: | TO-252-3, DPak (2 Leads + Tab), SC-63 |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
FDB029N06Sanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 60V 120A D2PAK |
|
SISS05DN-T1-GE3Vishay / Siliconix |
MOSFET P-CH 30V 29.4A/108A PPAK |
|
SSM3K16CT(TPL3)Toshiba Electronic Devices and Storage Corporation |
MOSFET N-CH 20V 100MA CST3 |
|
STF4N52K3STMicroelectronics |
MOSFET N-CH 525V 2.5A TO220FP |
|
SI4122DY-T1-GE3Vishay / Siliconix |
MOSFET N-CH 40V 27.2A 8SO |
|
IAUT260N10S5N019ATMA1IR (Infineon Technologies) |
MOSFET N-CH 100V 260A 8HSOF |
|
NTTFS4C53NTAGRochester Electronics |
MOSFET N-CH 30V 35A 8WDFN |
|
STH315N10F7-2STMicroelectronics |
MOSFET N-CH 100V 180A H2PAK-2 |
|
MMFTN20Diotec Semiconductor |
MOSFET N-CH 50V 100MA SOT23-3 |
|
RS1E150GNTBROHM Semiconductor |
MOSFET N-CH 30V 15A 8HSOP |
|
HUF76439S3STSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 60V 75A D2PAK |
|
IRF510SPBFVishay / Siliconix |
MOSFET N-CH 100V 5.6A D2PAK |
|
SCT10N120STMicroelectronics |
SICFET N-CH 1200V 12A HIP247 |