类型 | 描述 |
---|---|
系列: | MDmesh™ K5 |
包裹: | Tape & Reel (TR) |
零件状态: | Active |
场效应管类型: | N-Channel |
技术: | MOSFET (Metal Oxide) |
漏源电压 (vdss): | 800 V |
电流 - 连续漏极 (id) @ 25°c: | 16A (Tc) |
驱动电压(最大 rds on,最小 rds on): | 10V |
rds on (max) @ id, vgs: | 280mOhm @ 8A, 10V |
vgs(th) (最大值) @ id: | 5V @ 100µA |
栅极电荷 (qg) (max) @ vgs: | 33 nC @ 10 V |
vgs (最大值): | ±30V |
输入电容 (ciss) (max) @ vds: | 1000 pF @ 100 V |
场效应管特征: | - |
功耗(最大值): | 35W (Tc) |
工作温度: | -55°C ~ 150°C (TJ) |
安装类型: | Through Hole |
供应商设备包: | TO-220FP |
包/箱: | TO-220-3 Full Pack |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
IPB097N08N3GRochester Electronics |
N-CHANNEL POWER MOSFET |
|
APT47N60SC3GRoving Networks / Microchip Technology |
MOSFET N-CH 600V 47A D3PAK |
|
DMT3004LFG-13Zetex Semiconductors (Diodes Inc.) |
MOSFET NCH 30V 10.4A POWERDI |
|
PMH600UNEHNexperia |
MOSFET N-CH 20V 800MA DFN0606-3 |
|
BSC196N10NSGATMA1IR (Infineon Technologies) |
MOSFET N-CH 100V 8.5A/45A TDSON |
|
FDP18N50Sanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 500V 18A TO220-3 |
|
IXFP180N10T2Wickmann / Littelfuse |
MOSFET N-CH 100V 180A TO220AB |
|
FQP2N60Rochester Electronics |
MOSFET N-CH 600V 2.4A TO220-3 |
|
IRFU430APBFVishay / Siliconix |
MOSFET N-CH 500V 5A TO251AA |
|
UPA2708GR-E1-ATRochester Electronics |
N-CHANNEL POWER MOSFET |
|
FQB19N20TMRochester Electronics |
MOSFET N-CH 200V 19.4A D2PAK |
|
FDD86369Sanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 80V 90A DPAK |
|
FDN352APSanyo Semiconductor/ON Semiconductor |
MOSFET P-CH 30V 1.3A SUPERSOT3 |