English
简体中文
BRACKET WALL MOUNT FOR DIMENSION
CRYSTAL 32.0000MHZ 12PF SMD
LEGEND PLATE 22 MM OFF ON
MOSFET N-CH 800V 16A TO220FP
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | MDmesh™ K5 |
| 包裹: | Tape & Reel (TR) |
| 零件状态: | Active |
| 场效应管类型: | N-Channel |
| 技术: | MOSFET (Metal Oxide) |
| 漏源电压 (vdss): | 800 V |
| 电流 - 连续漏极 (id) @ 25°c: | 16A (Tc) |
| 驱动电压（最大 rds on，最小 rds on）: | 10V |
| rds on (max) @ id, vgs: | 280mOhm @ 8A, 10V |
| vgs(th) (最大值) @ id: | 5V @ 100µA |
| 栅极电荷 (qg) (max) @ vgs: | 33 nC @ 10 V |
| vgs (最大值): | ±30V |
| 输入电容 (ciss) (max) @ vds: | 1000 pF @ 100 V |
| 场效应管特征: | - |
| 功耗（最大值）: | 35W (Tc) |
| 工作温度: | -55°C ~ 150°C (TJ) |
| 安装类型: | Through Hole |
| 供应商设备包: | TO-220FP |
| 包/箱: | TO-220-3 Full Pack |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
IPB097N08N3GRochester Electronics |
N-CHANNEL POWER MOSFET |
|
APT47N60SC3GRoving Networks / Microchip Technology |
MOSFET N-CH 600V 47A D3PAK |
|
DMT3004LFG-13Zetex Semiconductors (Diodes Inc.) |
MOSFET NCH 30V 10.4A POWERDI |
|
PMH600UNEHNexperia |
MOSFET N-CH 20V 800MA DFN0606-3 |
|
BSC196N10NSGATMA1IR (Infineon Technologies) |
MOSFET N-CH 100V 8.5A/45A TDSON |
|
FDP18N50Sanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 500V 18A TO220-3 |
|
IXFP180N10T2Wickmann / Littelfuse |
MOSFET N-CH 100V 180A TO220AB |
|
FQP2N60Rochester Electronics |
MOSFET N-CH 600V 2.4A TO220-3 |
|
IRFU430APBFVishay / Siliconix |
MOSFET N-CH 500V 5A TO251AA |
|
UPA2708GR-E1-ATRochester Electronics |
N-CHANNEL POWER MOSFET |
|
FQB19N20TMRochester Electronics |
MOSFET N-CH 200V 19.4A D2PAK |
|
FDD86369Sanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 80V 90A DPAK |
|
FDN352APSanyo Semiconductor/ON Semiconductor |
MOSFET P-CH 30V 1.3A SUPERSOT3 |