English
简体中文
MOSFET N-CH 200V 19.4A D2PAK
RX TXRX MODULE CELLULAR
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | QFET® |
| 包裹: | Bulk |
| 零件状态: | Active |
| 场效应管类型: | N-Channel |
| 技术: | MOSFET (Metal Oxide) |
| 漏源电压 (vdss): | 200 V |
| 电流 - 连续漏极 (id) @ 25°c: | 19.4A (Tc) |
| 驱动电压（最大 rds on，最小 rds on）: | 10V |
| rds on (max) @ id, vgs: | 150mOhm @ 9.7A, 10V |
| vgs(th) (最大值) @ id: | 5V @ 250µA |
| 栅极电荷 (qg) (max) @ vgs: | 40 nC @ 10 V |
| vgs (最大值): | ±30V |
| 输入电容 (ciss) (max) @ vds: | 1.6 pF @ 25 V |
| 场效应管特征: | - |
| 功耗（最大值）: | 3.13W (Ta), 140W (Tc) |
| 工作温度: | -55°C ~ 150°C (TJ) |
| 安装类型: | Surface Mount |
| 供应商设备包: | D²PAK (TO-263AB) |
| 包/箱: | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
FDD86369Sanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 80V 90A DPAK |
|
FDN352APSanyo Semiconductor/ON Semiconductor |
MOSFET P-CH 30V 1.3A SUPERSOT3 |
|
SI2336DS-T1-GE3Vishay / Siliconix |
MOSFET N-CH 30V 5.2A SOT23-3 |
|
FQI7P06TURochester Electronics |
MOSFET P-CH 60V 7A I2PAK |
|
FCPF850N80ZRochester Electronics |
MOSFET N-CH 800V 6A TO220F |
|
SUP90P06-09L-E3Vishay / Siliconix |
MOSFET P-CH 60V 90A TO220AB |
|
SQ2361AEES-T1_GE3Vishay / Siliconix |
MOSFET P-CH 60V 2.8A SSOT23 |
|
TK10A55D(STA4,Q,M)Toshiba Electronic Devices and Storage Corporation |
MOSFET N-CH 550V 10A TO220SIS |
|
BS170Rochester Electronics |
MOSFET N-CH 60V 300MA TO92-3 |
|
RM60P60HDRectron USA |
MOSFET P-CHANNEL 60V 61A TO263-2 |
|
APT48M80B2Roving Networks / Microchip Technology |
MOSFET N-CH 800V 49A T-MAX |
|
SFP9530Rochester Electronics |
MOSFET P-CH 100V 10.5A TO220-3 |
|
RM20N650TIRectron USA |
MOSFET N-CHANNEL 650V 20A TO220F |