English
简体中文
RES SMD 28K OHM 0.25% 1/8W 0805
MOSFET N CH 100V 56A DPAK
IC MCU 32BIT 32KB FLASH 32UFQFPN
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | HEXFET® |
| 包裹: | Tape & Reel (TR)Cut Tape (CT) |
| 零件状态: | Active |
| 场效应管类型: | N-Channel |
| 技术: | MOSFET (Metal Oxide) |
| 漏源电压 (vdss): | 100 V |
| 电流 - 连续漏极 (id) @ 25°c: | 56A (Tc) |
| 驱动电压（最大 rds on，最小 rds on）: | 10V |
| rds on (max) @ id, vgs: | 13.9mOhm @ 38A, 10V |
| vgs(th) (最大值) @ id: | 4V @ 100µA |
| 栅极电荷 (qg) (max) @ vgs: | 81 nC @ 10 V |
| vgs (最大值): | ±20V |
| 输入电容 (ciss) (max) @ vds: | 3031 pF @ 50 V |
| 场效应管特征: | - |
| 功耗（最大值）: | 143W (Tc) |
| 工作温度: | -55°C ~ 175°C (TJ) |
| 安装类型: | Surface Mount |
| 供应商设备包: | D-Pak |
| 包/箱: | TO-252-3, DPak (2 Leads + Tab), SC-63 |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
FDMC8676Rochester Electronics |
MOSFET N-CH 30V 16A/18A POWER33 |
|
PMN230ENEAXNexperia |
MOSFET N-CH 60V 1.8A 6TSOP |
|
TK80S06K3L(T6L1,NQToshiba Electronic Devices and Storage Corporation |
MOSFET N-CH 60V 80A DPAK |
|
FDFS2P753ZRochester Electronics |
MOSFET P-CH 30V 3A 8SOIC |
|
BUK9529-100B/C127Rochester Electronics |
N-CHANNEL POWER MOSFET |
|
NTD4810NHT4GRochester Electronics |
MOSFET N-CH 30V 9A/54A DPAK |
|
IPP80N04S403AKSA1IR (Infineon Technologies) |
MOSFET N-CH 40V 80A TO220-3-1 |
|
TP0606N3-G-P002Roving Networks / Microchip Technology |
MOSFET P-CH 60V 320MA TO92-3 |
|
RJK0349DPA-01#J0BRochester Electronics |
MOSFET N-CH 30V 45A 8WPAK |
|
IPB065N10N3GATMA1IR (Infineon Technologies) |
MOSFET N-CH 100V 80A D2PAK |
|
SIHG73N60AE-GE3Vishay / Siliconix |
MOSFET N-CH 600V 60A TO247AC |
|
AUIRF7736M2TRRochester Electronics |
MOSFET N-CH 40V 22A/108A DIRECT |
|
DMN2250UFB-7BZetex Semiconductors (Diodes Inc.) |
MOSFET N-CH 20V 1.35A 3DFN |