English
简体中文
FIXED IND 2.7UH 10A 7 MOHM SMD
MOSFET N-CH 100V 200A TO264
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | Linear L2™ |
| 包裹: | Tube |
| 零件状态: | Active |
| 场效应管类型: | N-Channel |
| 技术: | MOSFET (Metal Oxide) |
| 漏源电压 (vdss): | 100 V |
| 电流 - 连续漏极 (id) @ 25°c: | 200A (Tc) |
| 驱动电压（最大 rds on，最小 rds on）: | 10V |
| rds on (max) @ id, vgs: | 11mOhm @ 100A, 10V |
| vgs(th) (最大值) @ id: | 4.5V @ 3mA |
| 栅极电荷 (qg) (max) @ vgs: | 540 nC @ 10 V |
| vgs (最大值): | ±20V |
| 输入电容 (ciss) (max) @ vds: | 23000 pF @ 25 V |
| 场效应管特征: | - |
| 功耗（最大值）: | 1040W (Tc) |
| 工作温度: | -55°C ~ 150°C (TJ) |
| 安装类型: | Through Hole |
| 供应商设备包: | TO-264 (IXTK) |
| 包/箱: | TO-264-3, TO-264AA |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
APT77N60SC6/TRRoving Networks / Microchip Technology |
MOSFET N-CH 600V 77A D3PAK |
|
NDT451ANSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 30V 7.2A SOT-223-4 |
|
FDC638APZSanyo Semiconductor/ON Semiconductor |
MOSFET P-CH 20V 4.5A SUPERSOT6 |
|
STB36NM60NDSTMicroelectronics |
MOSFET N-CH 600V 29A D2PAK |
|
SPW47N60CFDFKSA1IR (Infineon Technologies) |
MOSFET N-CH 600V 46A TO247-3 |
|
AOSP32320CAlpha and Omega Semiconductor, Inc. |
MOSFET N-CH 30V 8.5A 8SOIC |
|
FDMC86260ET150Sanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 150V 5.4A/25A PWR33 |
|
NDD03N50Z-1GRochester Electronics |
MOSFET N-CH 500V 2.6A IPAK |
|
IPP05CN10NGXKSA1IR (Infineon Technologies) |
MOSFET N-CH 100V 100A TO220-3 |
|
PMPB24EPXNexperia |
MOSFET P-CH 30V 6.4A DFN2020MD-6 |
|
STB45N30M5STMicroelectronics |
NCHANNEL 300 V 0.037 OHM TYP. 53 |
|
CMLDM7120G TR PBFREECentral Semiconductor |
MOSFET N-CH 20V 1A SOT563 |
|
RD3L150SNTL1ROHM Semiconductor |
MOSFET N-CH 60V 15A TO252 |