English
简体中文
FIXED IND 3.3UH 1.85A 72.1 MOHM
MEMS OSC XO 18.4320MHZ LVCMOS LV
MOSFET P-CH 12V 4.1A SOT23-3
IC SRAM 128KBIT PARALLEL 64TQFP
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | TrenchFET® |
| 包裹: | Tape & Reel (TR)Cut Tape (CT) |
| 零件状态: | Active |
| 场效应管类型: | P-Channel |
| 技术: | MOSFET (Metal Oxide) |
| 漏源电压 (vdss): | 12 V |
| 电流 - 连续漏极 (id) @ 25°c: | 4.1A (Ta) |
| 驱动电压（最大 rds on，最小 rds on）: | 1.8V, 4.5V |
| rds on (max) @ id, vgs: | 32mOhm @ 5.3A, 4.5V |
| vgs(th) (最大值) @ id: | 1V @ 250µA |
| 栅极电荷 (qg) (max) @ vgs: | 18 nC @ 4.5 V |
| vgs (最大值): | ±8V |
| 输入电容 (ciss) (max) @ vds: | 1100 pF @ 6 V |
| 场效应管特征: | - |
| 功耗（最大值）: | 750mW (Ta) |
| 工作温度: | -55°C ~ 150°C (TJ) |
| 安装类型: | Surface Mount |
| 供应商设备包: | SOT-23-3 (TO-236) |
| 包/箱: | TO-236-3, SC-59, SOT-23-3 |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
SI8425DB-T1-E1Vishay / Siliconix |
MOSFET P-CH 20V 4WLCSP |
|
STP160N4LF6STMicroelectronics |
MOSFET N-CH 40V 120A TO220 |
|
IXFP38N30X3Wickmann / Littelfuse |
MOSFET N-CH 300V 38A TO220 |
|
NTD80N02T4Rochester Electronics |
MOSFET N-CH 24V 80A DPAK |
|
IRF840STRLPBFVishay / Siliconix |
MOSFET N-CH 500V 8A D2PAK |
|
STD47N10F7AGSTMicroelectronics |
MOSFET N-CH 100V 45A DPAK |
|
IXFH74N20PWickmann / Littelfuse |
MOSFET N-CH 200V 74A TO247AD |
|
SI2302A-TPMicro Commercial Components (MCC) |
MOSFET N-CH 20V 3A SOT23 |
|
IPD50N06S4L12ATMA1Rochester Electronics |
MOSFET N-CH 60V 50A TO252-31 |
|
HUF75829D3Rochester Electronics |
MOSFET N-CH 150V 18A IPAK |
|
SSM3J332R,LFToshiba Electronic Devices and Storage Corporation |
MOSFET P-CH 30V 6A SOT23F |
|
BSC098N10NS5ATMA1IR (Infineon Technologies) |
MOSFET N-CH 100V 60A TDSON |
|
PSMN015-60PS,127Nexperia |
MOSFET N-CH 60V 50A TO220AB |