类型 | 描述 |
---|---|
系列: | - |
包裹: | Bulk |
零件状态: | Active |
场效应管类型: | P-Channel |
技术: | MOSFET (Metal Oxide) |
漏源电压 (vdss): | 350 V |
电流 - 连续漏极 (id) @ 25°c: | 180mA (Tj) |
驱动电压(最大 rds on,最小 rds on): | 2.5V, 10V |
rds on (max) @ id, vgs: | 15Ohm @ 300mA, 10V |
vgs(th) (最大值) @ id: | 2V @ 1mA |
栅极电荷 (qg) (max) @ vgs: | - |
vgs (最大值): | ±20V |
输入电容 (ciss) (max) @ vds: | 300 pF @ 25 V |
场效应管特征: | - |
功耗(最大值): | 1W (Ta) |
工作温度: | -55°C ~ 150°C (TJ) |
安装类型: | Through Hole |
供应商设备包: | TO-92-3 |
包/箱: | TO-226-3, TO-92-3 (TO-226AA) |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
TK90S06N1L,LXHQToshiba Electronic Devices and Storage Corporation |
MOSFET N-CH 60V 90A DPAK |
|
FQPF5N50CRochester Electronics |
MOSFET N-CH 500V 5A TO220F |
|
HUF76423D3SRochester Electronics |
MOSFET N-CH 60V 20A TO252AA |
|
IRFPS43N50KPBFVishay / Siliconix |
MOSFET N-CH 500V 47A SUPER247 |
|
IPB80N06S2L06ATMA2IR (Infineon Technologies) |
MOSFET N-CH 55V 80A TO263-3 |
|
SIHH24N65EF-T1-GE3Vishay / Siliconix |
MOSFET N-CH 650V 23A PPAK 8 X 8 |
|
PSMN4R3-80PS,127Nexperia |
MOSFET N-CH 80V 120A TO220AB |
|
STU6N90K5STMicroelectronics |
MOSFET N-CH 900V 6A IPAK |
|
IRLD110PBFVishay / Siliconix |
MOSFET N-CH 100V 1A 4DIP |
|
SQD45P03-12_GE3Vishay / Siliconix |
MOSFET P-CH 30V 50A TO252 |
|
CSD13302WTTexas Instruments |
MOSFET N-CH 12V 1.6A 4DSBGA |
|
SI4154DY-T1-GE3Vishay / Siliconix |
MOSFET N-CH 40V 36A 8SO |
|
PMV20EN215Rochester Electronics |
SMALL SIGNAL N-CHANNEL MOSFET |