English
简体中文
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | - |
| 包裹: | Bulk |
| 零件状态: | Active |
| 场效应管类型: | P-Channel |
| 技术: | MOSFET (Metal Oxide) |
| 漏源电压 (vdss): | 60 V |
| 电流 - 连续漏极 (id) @ 25°c: | 15.5A (Ta) |
| 驱动电压（最大 rds on，最小 rds on）: | 5V |
| rds on (max) @ id, vgs: | 150mOhm @ 7.5A, 5V |
| vgs(th) (最大值) @ id: | 2V @ 250µA |
| 栅极电荷 (qg) (max) @ vgs: | 26 nC @ 5 V |
| vgs (最大值): | ±20V |
| 输入电容 (ciss) (max) @ vds: | 1.19 pF @ 25 V |
| 场效应管特征: | - |
| 功耗（最大值）: | 65W (Tc) |
| 工作温度: | -55°C ~ 175°C (TJ) |
| 安装类型: | Surface Mount |
| 供应商设备包: | DPAK |
| 包/箱: | TO-252-3, DPak (2 Leads + Tab), SC-63 |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
AUIRF1010ZSRochester Electronics |
AUTOMOTIVE HEXFET N CHANNEL |
|
IPB015N08N5ATMA1IR (Infineon Technologies) |
MOSFET N-CH 80V 180A TO263-7 |
|
SIHH180N60E-T1-GE3Vishay / Siliconix |
MOSFET N-CH 600V 19A PPAK 8 X 8 |
|
AON7290Alpha and Omega Semiconductor, Inc. |
MOSFET N CH 100V 15A 8DFN |
|
STW25N60M2-EPSTMicroelectronics |
MOSFET N-CHANNEL 600V 18A TO247 |
|
FDD4243Sanyo Semiconductor/ON Semiconductor |
MOSFET P-CH 40V 6.7A/14A DPAK |
|
TSM036N03PQ56 RLGTSC (Taiwan Semiconductor) |
MOSFET N-CH 30V 124A 8PDFN |
|
IXTA1N200P3HVWickmann / Littelfuse |
MOSFET N-CH 2000V 1A TO263 |
|
TJ80S04M3L(T6L1,NQToshiba Electronic Devices and Storage Corporation |
MOSFET P-CH 40V 80A DPAK |
|
IRF7580MTRPBFIR (Infineon Technologies) |
MOSFET N-CH 60V 114A DIRECTFET |
|
SIR178DP-T1-RE3Vishay / Siliconix |
MOSFET N-CH 20V 100A/430A PPAK |
|
BUK751R8-40E127Rochester Electronics |
N-CHANNEL POWER MOSFET |
|
IXTH10N100D2Wickmann / Littelfuse |
MOSFET N-CH 1000V 10A TO247 |
