类型 | 描述 |
---|---|
系列: | Automotive, AEC-Q101 |
包裹: | Tape & Reel (TR) |
零件状态: | Active |
场效应管类型: | P-Channel |
技术: | MOSFET (Metal Oxide) |
漏源电压 (vdss): | 60 V |
电流 - 连续漏极 (id) @ 25°c: | 2.4A (Ta) |
驱动电压(最大 rds on,最小 rds on): | 4.5V, 10V |
rds on (max) @ id, vgs: | 155mOhm @ 2A, 10V |
vgs(th) (最大值) @ id: | 3V @ 250µA |
栅极电荷 (qg) (max) @ vgs: | 8.3 nC @ 10 V |
vgs (最大值): | ±20V |
输入电容 (ciss) (max) @ vds: | 512 pF @ 30 V |
场效应管特征: | - |
功耗(最大值): | 920mW |
工作温度: | -55°C ~ 175°C (TJ) |
安装类型: | Surface Mount |
供应商设备包: | SOT-23 |
包/箱: | TO-236-3, SC-59, SOT-23-3 |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
BSZ0602LSATMA1IR (Infineon Technologies) |
MOSFET N-CH 80V 13A/40A TSDSON |
|
BUK965R8-100E,118Nexperia |
MOSFET N-CH 100V 120A D2PAK |
|
NTTFS5C670NLTWGSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 60V 16A/70A 8WDFN |
|
SI7110DN-T1-GE3Vishay / Siliconix |
MOSFET N-CH 20V 13.5A PPAK1212-8 |
|
BUK9615-100A,118Rochester Electronics |
PFET, 75A I(D), 100V, 0.016OHM, |
|
2SK1405-ERochester Electronics |
N-CHANNEL POWER MOSFET |
|
TSM160N10LCR RLGTSC (Taiwan Semiconductor) |
MOSFET N-CH 100V 46A 8PDFN |
|
XP151A12A2MR-GTorex Semiconductor Ltd. |
MOSFET N-CH 20V 1A SOT23 |
|
PSMN017-30EL,127Nexperia |
MOSFET N-CH 30V 32A I2PAK |
|
IPA075N15N3GXKSA1IR (Infineon Technologies) |
MOSFET N-CH 150V 43A TO220-3 |
|
STP33N65M2STMicroelectronics |
MOSFET N-CH 650V 24A TO220 |
|
IRLL024NPBF-INFRochester Electronics |
HEXFET POWER MOSFET |
|
CSD17483F4Texas Instruments |
MOSFET N-CH 30V 1.5A 3PICOSTAR |