







 
                            FIXED IND 10NH 500MA 170 MOHM
 
                            MOSFET N-CH 800V 21A TO220AB
 
                            CONN RCPT FMALE 128POS CRIMP
 
                            FUSE BLOCK CART 300V 10A CHASSIS
| 类型 | 描述 | 
|---|---|
| 系列: | E | 
| 包裹: | Tube | 
| 零件状态: | Active | 
| 场效应管类型: | N-Channel | 
| 技术: | MOSFET (Metal Oxide) | 
| 漏源电压 (vdss): | 800 V | 
| 电流 - 连续漏极 (id) @ 25°c: | 21A (Tc) | 
| 驱动电压(最大 rds on,最小 rds on): | 10V | 
| rds on (max) @ id, vgs: | 184mOhm @ 10A, 10V | 
| vgs(th) (最大值) @ id: | 4V @ 250µA | 
| 栅极电荷 (qg) (max) @ vgs: | 89 nC @ 10 V | 
| vgs (最大值): | ±30V | 
| 输入电容 (ciss) (max) @ vds: | 1836 pF @ 100 V | 
| 场效应管特征: | - | 
| 功耗(最大值): | 208W (Tc) | 
| 工作温度: | -55°C ~ 150°C (TJ) | 
| 安装类型: | Through Hole | 
| 供应商设备包: | TO-220AB | 
| 包/箱: | TO-220-3 | 
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
|   | RS1E130GNTBROHM Semiconductor | MOSFET N-CH 30V 13A 8HSOP | 
|   | STB20N65M5STMicroelectronics | MOSFET N-CH 650V 18A D2PAK | 
|   | FDD8445Sanyo Semiconductor/ON Semiconductor | MOSFET N-CH 40V 70A TO252AA | 
|   | HAT2173N-EL-ERochester Electronics | MOSFET N-CH 100V 25A 8LFPAK | 
|   | SCT3060AW7TLROHM Semiconductor | TRANS SJT N-CH 650V 38A TO263-7 | 
|   | IXTP3N120Wickmann / Littelfuse | MOSFET N-CH 1200V 3A TO220AB | 
|   | STD5N52K3STMicroelectronics | MOSFET N-CH 525V 4.4A DPAK | 
|   | STL26N60DM6STMicroelectronics | MOSFET N-CH 600V 15A PWRFLAT HV | 
|   | SI8416DB-T2-E1Vishay / Siliconix | MOSFET N-CH 8V 16A 6MICRO FOOT | 
|   | FQU3N50CTUSanyo Semiconductor/ON Semiconductor | MOSFET N-CH 500V 2.5A IPAK | 
|   | HUF76445S3SRochester Electronics | MOSFET N-CH 60V 75A D2PAK | 
|   | IRF7205TRPBFIR (Infineon Technologies) | MOSFET P-CH 30V 4.6A 8SO | 
|   | SI8816EDB-T2-E1Vishay / Siliconix | MOSFET N-CH 30V 4MICROFOOT |