English
简体中文
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | HEXFET® |
| 包裹: | Tube |
| 零件状态: | Active |
| 场效应管类型: | N-Channel |
| 技术: | MOSFET (Metal Oxide) |
| 漏源电压 (vdss): | 40 V |
| 电流 - 连续漏极 (id) @ 25°c: | 195A (Tc) |
| 驱动电压（最大 rds on，最小 rds on）: | 4.5V, 10V |
| rds on (max) @ id, vgs: | 1.7mOhm @ 195A, 10V |
| vgs(th) (最大值) @ id: | 2.5V @ 250µA |
| 栅极电荷 (qg) (max) @ vgs: | 162 nC @ 4.5 V |
| vgs (最大值): | ±20V |
| 输入电容 (ciss) (max) @ vds: | 10315 pF @ 25 V |
| 场效应管特征: | - |
| 功耗（最大值）: | 375W (Tc) |
| 工作温度: | -55°C ~ 175°C (TJ) |
| 安装类型: | Through Hole |
| 供应商设备包: | TO-220AB |
| 包/箱: | TO-220-3 |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
FQI17N08LTURochester Electronics |
MOSFET N-CH 80V 16.5A I2PAK |
|
FQPF13N50TRochester Electronics |
MOSFET N-CH 500V 12.5A TO220F |
|
IPB090N06N3GATMA1IR (Infineon Technologies) |
MOSFET N-CH 60V 50A D2PAK |
|
IRLR2905PBFRochester Electronics |
HEXFET POWER MOSFET |
|
FQD3N50CTMRochester Electronics |
MOSFET N-CH 500V 2.5A DPAK |
|
IRF241Rochester Electronics |
MOSFET N-CH 150V 18A TO204AE |
|
SFU9214TURochester Electronics |
P-CHANNEL POWER MOSFET |
|
TN2124K1-GRoving Networks / Microchip Technology |
MOSFET N-CH 240V 134MA TO236AB |
|
FQPF4N20Rochester Electronics |
MOSFET N-CH 200V 2.8A TO220F |
|
IPB60R125CFD7ATMA1IR (Infineon Technologies) |
MOSFET N-CH 650V 18A TO263-3-2 |
|
MMFT2N25ET3Rochester Electronics |
SMALL SIGNAL N-CHANNEL MOSFET |
|
NX138BKWFNexperia |
MOSFET N-CHANNEL 60V 210MA SC70 |
|
APT6015LVFRGRoving Networks / Microchip Technology |
MOSFET N-CH 600V 38A TO264 |
