类型 | 描述 |
---|---|
系列: | OptiMOS™ |
包裹: | Tape & Reel (TR)Cut Tape (CT) |
零件状态: | Active |
场效应管类型: | N-Channel |
技术: | MOSFET (Metal Oxide) |
漏源电压 (vdss): | 60 V |
电流 - 连续漏极 (id) @ 25°c: | 50A (Tc) |
驱动电压(最大 rds on,最小 rds on): | 10V |
rds on (max) @ id, vgs: | 9mOhm @ 50A, 10V |
vgs(th) (最大值) @ id: | 4V @ 34µA |
栅极电荷 (qg) (max) @ vgs: | 36 nC @ 10 V |
vgs (最大值): | ±20V |
输入电容 (ciss) (max) @ vds: | 2900 pF @ 30 V |
场效应管特征: | - |
功耗(最大值): | 71W (Tc) |
工作温度: | -55°C ~ 175°C (TJ) |
安装类型: | Surface Mount |
供应商设备包: | D²PAK (TO-263AB) |
包/箱: | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
IRLR2905PBFRochester Electronics |
HEXFET POWER MOSFET |
|
FQD3N50CTMRochester Electronics |
MOSFET N-CH 500V 2.5A DPAK |
|
IRF241Rochester Electronics |
MOSFET N-CH 150V 18A TO204AE |
|
SFU9214TURochester Electronics |
P-CHANNEL POWER MOSFET |
|
TN2124K1-GRoving Networks / Microchip Technology |
MOSFET N-CH 240V 134MA TO236AB |
|
FQPF4N20Rochester Electronics |
MOSFET N-CH 200V 2.8A TO220F |
|
IPB60R125CFD7ATMA1IR (Infineon Technologies) |
MOSFET N-CH 650V 18A TO263-3-2 |
|
MMFT2N25ET3Rochester Electronics |
SMALL SIGNAL N-CHANNEL MOSFET |
|
NX138BKWFNexperia |
MOSFET N-CHANNEL 60V 210MA SC70 |
|
APT6015LVFRGRoving Networks / Microchip Technology |
MOSFET N-CH 600V 38A TO264 |
|
DN2540N3-GRoving Networks / Microchip Technology |
MOSFET N-CH 400V 120MA TO92 |
|
IRF7204TRPBFIR (Infineon Technologies) |
MOSFET P-CH 20V 5.3A 8SO |
|
IRF830SPBFVishay / Siliconix |
MOSFET N-CH 500V 4.5A D2PAK |