English
简体中文
CRYSTAL 30.0000MHZ 19PF SMD
MOSFET P-CH 20V 5.3A 8SO
24P VAL-U-LOK HCS VRTHDR W/PGS G
COMP O= .156,L= .38,W= .023
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | HEXFET® |
| 包裹: | Tape & Reel (TR)Cut Tape (CT) |
| 零件状态: | Active |
| 场效应管类型: | P-Channel |
| 技术: | MOSFET (Metal Oxide) |
| 漏源电压 (vdss): | 20 V |
| 电流 - 连续漏极 (id) @ 25°c: | 5.3A (Ta) |
| 驱动电压（最大 rds on，最小 rds on）: | 4.5V, 10V |
| rds on (max) @ id, vgs: | 60mOhm @ 5.3A, 10V |
| vgs(th) (最大值) @ id: | 2.5V @ 250µA |
| 栅极电荷 (qg) (max) @ vgs: | 25 nC @ 10 V |
| vgs (最大值): | ±12V |
| 输入电容 (ciss) (max) @ vds: | 860 pF @ 10 V |
| 场效应管特征: | - |
| 功耗（最大值）: | 2.5W (Tc) |
| 工作温度: | -55°C ~ 150°C (TJ) |
| 安装类型: | Surface Mount |
| 供应商设备包: | 8-SO |
| 包/箱: | 8-SOIC (0.154", 3.90mm Width) |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
IRF830SPBFVishay / Siliconix |
MOSFET N-CH 500V 4.5A D2PAK |
|
HUFA75329G3Rochester Electronics |
N-CHANNEL POWER MOSFET |
|
TP2435N8-GRoving Networks / Microchip Technology |
MOSFET P-CH 350V 231MA TO243AA |
|
IXTP36N30PWickmann / Littelfuse |
MOSFET N-CH 300V 36A TO220AB |
|
2SK3055-AZRochester Electronics |
N-CHANNEL POWER MOSFET |
|
AON7410Alpha and Omega Semiconductor, Inc. |
MOSFET N-CH 30V 9.5A/24A 8DFN |
|
SPD15P10PLGBTMA1IR (Infineon Technologies) |
MOSFET P-CH 100V 15A TO252-3 |
|
STF28NM50NSTMicroelectronics |
MOSFET N-CH 500V 21A TO220FP |
|
DMP213DUFA-7BZetex Semiconductors (Diodes Inc.) |
MOSFET P-CH 25V 145MA 3DFN |
|
SKI04044Sanken Electric Co., Ltd. |
MOSFET N-CH 40V 80A TO263 |
|
NVD5890NT4GRochester Electronics |
24A, 40V, 0.0037OHM, N-CHANNEL, |
|
STFI26N60M2STMicroelectronics |
MOSFET N-CH 600V 20A I2PAKFP |
|
IRF630SPBFVishay / Siliconix |
MOSFET N-CH 200V 9A D2PAK |