English
简体中文
MOSFET N-CH 30V 44A LFPAK56
ULTRASONIC SENSOR XL-TRASHSONAR
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | - |
| 包裹: | Tape & Reel (TR)Cut Tape (CT) |
| 零件状态: | Active |
| 场效应管类型: | N-Channel |
| 技术: | MOSFET (Metal Oxide) |
| 漏源电压 (vdss): | 30 V |
| 电流 - 连续漏极 (id) @ 25°c: | 44A (Tc) |
| 驱动电压（最大 rds on，最小 rds on）: | 4.5V, 10V |
| rds on (max) @ id, vgs: | 9.8mOhm @ 15A, 10V |
| vgs(th) (最大值) @ id: | 1.95V @ 1mA |
| 栅极电荷 (qg) (max) @ vgs: | 10.4 nC @ 10 V |
| vgs (最大值): | ±20V |
| 输入电容 (ciss) (max) @ vds: | 681 pF @ 15 V |
| 场效应管特征: | - |
| 功耗（最大值）: | 34W (Tc) |
| 工作温度: | -55°C ~ 175°C (TJ) |
| 安装类型: | Surface Mount |
| 供应商设备包: | LFPAK56, Power-SO8 |
| 包/箱: | SC-100, SOT-669 |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
PMPB27EPAXNexperia |
MOSFET P-CH 30V 6.1A DFN2020MD-6 |
|
IPI60R280C6Rochester Electronics |
MOSFET N-CH 600V 13.8A TO262-3 |
|
PMT200EN,135Rochester Electronics |
MOSFET N-CH 100V 1.8A SOT223 |
|
CSD16322Q5Texas Instruments |
MOSFET N-CH 25V 21A/97A 8VSON |
|
FQPF16N25Rochester Electronics |
MOSFET N-CH 250V 9.5A TO220F |
|
MCU12P10-TPMicro Commercial Components (MCC) |
MOSFET P-CH 100V 12A DPAK |
|
IRFBC42Rochester Electronics |
N-CHANNEL POWER MOSFET |
|
FDB8443Rochester Electronics |
MOSFET N-CH 40V 25A/120A TO263AB |
|
BSC100N03LSGATMA1Rochester Electronics |
MOSFET N-CH 30V 13A/44A TDSON |
|
APT19F100JRoving Networks / Microchip Technology |
MOSFET N-CH 1000V 20A ISOTOP |
|
AOTF4S60Alpha and Omega Semiconductor, Inc. |
MOSFET N-CH 600V 4A TO220-3F |
|
IPB017N10N5ATMA1IR (Infineon Technologies) |
MOSFET N-CH 100V 180A TO263-7 |
|
SIRA24DP-T1-GE3Vishay / Siliconix |
MOSFET N-CH 25V 60A PPAK SO-8 |