English
简体中文
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | POWER MOS 8™ |
| 包裹: | Tube |
| 零件状态: | Active |
| 场效应管类型: | N-Channel |
| 技术: | MOSFET (Metal Oxide) |
| 漏源电压 (vdss): | 1000 V |
| 电流 - 连续漏极 (id) @ 25°c: | 20A (Tc) |
| 驱动电压（最大 rds on，最小 rds on）: | 10V |
| rds on (max) @ id, vgs: | 440mOhm @ 16A, 10V |
| vgs(th) (最大值) @ id: | 5V @ 2.5mA |
| 栅极电荷 (qg) (max) @ vgs: | 260 nC @ 10 V |
| vgs (最大值): | ±30V |
| 输入电容 (ciss) (max) @ vds: | 8500 pF @ 25 V |
| 场效应管特征: | - |
| 功耗（最大值）: | 460W (Tc) |
| 工作温度: | -55°C ~ 150°C (TJ) |
| 安装类型: | Chassis Mount |
| 供应商设备包: | ISOTOP® |
| 包/箱: | SOT-227-4, miniBLOC |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
AOTF4S60Alpha and Omega Semiconductor, Inc. |
MOSFET N-CH 600V 4A TO220-3F |
|
IPB017N10N5ATMA1IR (Infineon Technologies) |
MOSFET N-CH 100V 180A TO263-7 |
|
SIRA24DP-T1-GE3Vishay / Siliconix |
MOSFET N-CH 25V 60A PPAK SO-8 |
|
IPB80N07S405ATMA1Rochester Electronics |
MOSFET N-CH 75V 80A TO263-3 |
|
FDMS86202ET120Sanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 120V 13.5/102A PWR56 |
|
TK72A12N1,S4XToshiba Electronic Devices and Storage Corporation |
MOSFET N-CH 120V 72A TO220SIS |
|
SPP08P06PXKRochester Electronics |
P-CHANNEL POWER MOSFET |
|
C3M0016120KWolfspeed - a Cree company |
SICFET N-CH 1.2KV 115A TO247-4 |
|
RS1L180GNTBROHM Semiconductor |
MOSFET N-CH 60V 18A/68A 8HSOP |
|
TSM2N7002KCX RFGTSC (Taiwan Semiconductor) |
MOSFET N-CH 60V 300MA SOT23 |
|
TK110A10PL,S4XToshiba Electronic Devices and Storage Corporation |
X35 PB-F POWER MOSFET TRANSISTOR |
|
SIHG22N50D-GE3Vishay / Siliconix |
MOSFET N-CH 500V 22A TO247AC |
|
DMN6022SSS-13Zetex Semiconductors (Diodes Inc.) |
MOSFET N-CH 6.9A 8SO |
