English
简体中文
RES 36.5 OHM 1/20W 1% AXIAL
MOSFET N-CH 60V 75A PPAK SO-8
XS KEYBOARD BLK USB PS/2 103 KEY
.020 SQ. RA POST ASSEMBLY
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | Automotive, AEC-Q101, TrenchFET® |
| 包裹: | Tape & Reel (TR)Cut Tape (CT) |
| 零件状态: | Active |
| 场效应管类型: | N-Channel |
| 技术: | MOSFET (Metal Oxide) |
| 漏源电压 (vdss): | 60 V |
| 电流 - 连续漏极 (id) @ 25°c: | 75A (Tc) |
| 驱动电压（最大 rds on，最小 rds on）: | 10V |
| rds on (max) @ id, vgs: | 6.2mOhm @ 10A, 10V |
| vgs(th) (最大值) @ id: | 3.5V @ 250µA |
| 栅极电荷 (qg) (max) @ vgs: | 55 nC @ 10 V |
| vgs (最大值): | ±20V |
| 输入电容 (ciss) (max) @ vds: | 3500 pF @ 25 V |
| 场效应管特征: | - |
| 功耗（最大值）: | 68W (Tc) |
| 工作温度: | -55°C ~ 175°C (TJ) |
| 安装类型: | Surface Mount |
| 供应商设备包: | PowerPAK® SO-8 |
| 包/箱: | PowerPAK® SO-8 |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
BUK7Y7R8-80EXNexperia |
MOSFET N-CH 80V 100A LFPAK56 |
|
STF9N65M2STMicroelectronics |
MOSFET N-CH 650V 5A TO220FP |
|
FQPF13N50CFSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 500V 13A TO220F |
|
BUK653R5-55C,127Rochester Electronics |
PFET, 120A I(D), 55V, 0.0055OHM, |
|
DMP4065S-13Zetex Semiconductors (Diodes Inc.) |
MOSFET P-CH 40V 2.4A SOT23 |
|
FCPF1300N80ZSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 800V 4A TO220F |
|
PMPB15XP,115Nexperia |
MOSFET P-CH 12V 8.2A DFN2020MD-6 |
|
NTB22N06LT4Rochester Electronics |
MOSFET N-CH 60V 22A D2PAK |
|
FQI4N80TURochester Electronics |
MOSFET N-CH 800V 3.9A I2PAK |
|
UF3C065040K4SUnitedSiC |
MOSFET N-CH 650V 54A TO247-4 |
|
SFT1452-HRochester Electronics |
MOSFET N-CH 250V 3A IPAK/TP |
|
TSM2323CX RFGTSC (Taiwan Semiconductor) |
MOSFET P-CHANNEL 20V 4.7A SOT23 |
|
TSM3N90CZ C0GTSC (Taiwan Semiconductor) |
MOSFET N-CH 900V 2.5A TO220 |