English
简体中文
MOSFET N-CH 100V 37A PPAK SO-8
SOFTWARE SETTING, 128 AES ENCRYP
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | TrenchFET® |
| 包裹: | Tape & Reel (TR)Cut Tape (CT) |
| 零件状态: | Active |
| 场效应管类型: | N-Channel |
| 技术: | MOSFET (Metal Oxide) |
| 漏源电压 (vdss): | 100 V |
| 电流 - 连续漏极 (id) @ 25°c: | 37A (Tc) |
| 驱动电压（最大 rds on，最小 rds on）: | 6V, 10V |
| rds on (max) @ id, vgs: | 16.2mOhm @ 15A, 10V |
| vgs(th) (最大值) @ id: | 3.6V @ 250µA |
| 栅极电荷 (qg) (max) @ vgs: | 22 nC @ 6 V |
| vgs (最大值): | ±20V |
| 输入电容 (ciss) (max) @ vds: | 1360 pF @ 50 V |
| 场效应管特征: | - |
| 功耗（最大值）: | 44.5W (Tc) |
| 工作温度: | -55°C ~ 150°C (TJ) |
| 安装类型: | Surface Mount |
| 供应商设备包: | PowerPAK® SO-8 |
| 包/箱: | PowerPAK® SO-8 |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
AOTF190A60LAlpha and Omega Semiconductor, Inc. |
MOSFET N-CH 600V 20A TO220F |
|
IPP80R1K2P7Rochester Electronics |
IPP80R1K2 - 800V COOLMOS N-CHANN |
|
IXTY1R4N120PHVWickmann / Littelfuse |
MOSFET N-CH 1200V 1.4A TO252 |
|
IRFD9113Rochester Electronics |
-0.6A, -80V, 1.6 OHM, P-CHANNEL |
|
SISS26DN-T1-GE3Vishay / Siliconix |
MOSFET N-CH 60V 60A PPAK1212-8S |
|
TBB1004DMTL-HRochester Electronics |
RF N-CHANNEL MOSFET |
|
SQM40022EM_GE3Vishay / Siliconix |
MOSFET N-CH 40V 150A TO263-7 |
|
IAUC70N08S5N074ATMA1IR (Infineon Technologies) |
MOSFET N-CH 80V 70A 8TDSON-33 |
|
HUF76121D3SRochester Electronics |
N-CHANNEL POWER MOSFET |
|
SFU9210TURochester Electronics |
P-CHANNEL POWER MOSFET |
|
PSMN013-100BS,118Nexperia |
MOSFET N-CH 100V 68A D2PAK |
|
BS250FTAZetex Semiconductors (Diodes Inc.) |
MOSFET P-CH 45V 90MA SOT23-3 |
|
NTLJS2103PTAGRochester Electronics |
MOSFET P-CH 12V 3.5A 6WDFN |