English
简体中文
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | SuperFET® III |
| 包裹: | Tape & Reel (TR)Cut Tape (CT) |
| 零件状态: | Active |
| 场效应管类型: | N-Channel |
| 技术: | MOSFET (Metal Oxide) |
| 漏源电压 (vdss): | 650 V |
| 电流 - 连续漏极 (id) @ 25°c: | 24A (Tc) |
| 驱动电压（最大 rds on，最小 rds on）: | 10V |
| rds on (max) @ id, vgs: | 125mOhm @ 12A, 10V |
| vgs(th) (最大值) @ id: | 4.5V @ 590µA |
| 栅极电荷 (qg) (max) @ vgs: | 46 nC @ 10 V |
| vgs (最大值): | ±30V |
| 输入电容 (ciss) (max) @ vds: | 1940 pF @ 400 V |
| 场效应管特征: | - |
| 功耗（最大值）: | 181W (Tc) |
| 工作温度: | -55°C ~ 150°C (TJ) |
| 安装类型: | Surface Mount |
| 供应商设备包: | TO-263 (D2Pak) |
| 包/箱: | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
FQA6N70Rochester Electronics |
MOSFET N-CH 700V 6.4A TO3P |
|
FDMC0310AS-F127Sanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 30V 21A 8MLP |
|
AUIRLL024NTRRochester Electronics |
MOSFET N-CH 55V 3.1A SOT223 |
|
BSC012N06NSATMA1IR (Infineon Technologies) |
MOSFET N-CH 60V 100A TSON-8 |
|
FQU8P10TUSanyo Semiconductor/ON Semiconductor |
MOSFET P-CH 100V 6.6A IPAK |
|
FDP61N20Sanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 200V 61A TO220-3 |
|
IPP110N20N3GXKSA1IR (Infineon Technologies) |
MOSFET N-CH 200V 88A TO220-3 |
|
IPP034N08N5AKSA1IR (Infineon Technologies) |
MOSFET N-CH 80V 120A TO220-3 |
|
HUFA76429D3STRochester Electronics |
MOSFET N-CH 60V 20A TO252AA |
|
APT6015LVRGRoving Networks / Microchip Technology |
MOSFET N-CH 600V 38A TO264 |
|
FQA24N50-ONRochester Electronics |
24A, 500V, 0.2OHM, N-CHANNEL, M |
|
IXFK120N30TWickmann / Littelfuse |
MOSFET N-CH 300V 120A TO264AA |
|
SI4386DY-T1-GE3Vishay / Siliconix |
MOSFET N-CH 30V 11A 8SO |
