English
简体中文
VARISTOR 27V 800A RADIAL
MOSFET N-CH 200V 61A TO220-3
IC AMP MPLEX AMP 16QSOP
IC FLASH 256MBIT SPI 8WPDFN
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | UniFET™ |
| 包裹: | Tube |
| 零件状态: | Active |
| 场效应管类型: | N-Channel |
| 技术: | MOSFET (Metal Oxide) |
| 漏源电压 (vdss): | 200 V |
| 电流 - 连续漏极 (id) @ 25°c: | 61A (Tc) |
| 驱动电压（最大 rds on，最小 rds on）: | 10V |
| rds on (max) @ id, vgs: | 41mOhm @ 30.5A, 10V |
| vgs(th) (最大值) @ id: | 5V @ 250µA |
| 栅极电荷 (qg) (max) @ vgs: | 75 nC @ 10 V |
| vgs (最大值): | ±30V |
| 输入电容 (ciss) (max) @ vds: | 3380 pF @ 25 V |
| 场效应管特征: | - |
| 功耗（最大值）: | 417W (Tc) |
| 工作温度: | -55°C ~ 150°C (TJ) |
| 安装类型: | Through Hole |
| 供应商设备包: | TO-220-3 |
| 包/箱: | TO-220-3 |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
IPP110N20N3GXKSA1IR (Infineon Technologies) |
MOSFET N-CH 200V 88A TO220-3 |
|
IPP034N08N5AKSA1IR (Infineon Technologies) |
MOSFET N-CH 80V 120A TO220-3 |
|
HUFA76429D3STRochester Electronics |
MOSFET N-CH 60V 20A TO252AA |
|
APT6015LVRGRoving Networks / Microchip Technology |
MOSFET N-CH 600V 38A TO264 |
|
FQA24N50-ONRochester Electronics |
24A, 500V, 0.2OHM, N-CHANNEL, M |
|
IXFK120N30TWickmann / Littelfuse |
MOSFET N-CH 300V 120A TO264AA |
|
SI4386DY-T1-GE3Vishay / Siliconix |
MOSFET N-CH 30V 11A 8SO |
|
IPD50R3K0CEBTMA1Rochester Electronics |
OPTLMOS N-CHANNEL POWER MOSFET |
|
AUIRF540ZIR (Infineon Technologies) |
MOSFET N-CH 100V 36A TO220AB |
|
BSH201,215Nexperia |
MOSFET P-CH 60V 300MA TO236AB |
|
IPI60R165CPAKSA1IR (Infineon Technologies) |
MOSFET N-CH 650V 21A TO262-3 |
|
TK20G60W,RVQToshiba Electronic Devices and Storage Corporation |
MOSFET N CH 600V 20A D2PAK |
|
TK12E80W,S1XToshiba Electronic Devices and Storage Corporation |
MOSFET N-CH 800V 11.5A TO220 |