English
简体中文
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | - |
| 包裹: | Tube |
| 零件状态: | Active |
| 场效应管类型: | N-Channel |
| 技术: | MOSFET (Metal Oxide) |
| 漏源电压 (vdss): | 600 V |
| 电流 - 连续漏极 (id) @ 25°c: | 60A (Tc) |
| 驱动电压（最大 rds on，最小 rds on）: | 10V |
| rds on (max) @ id, vgs: | 130mOhm @ 28A, 10V |
| vgs(th) (最大值) @ id: | 5V @ 2.5mA |
| 栅极电荷 (qg) (max) @ vgs: | 280 nC @ 10 V |
| vgs (最大值): | ±30V |
| 输入电容 (ciss) (max) @ vds: | 11300 pF @ 25 V |
| 场效应管特征: | - |
| 功耗（最大值）: | 1040W (Tc) |
| 工作温度: | -55°C ~ 150°C (TJ) |
| 安装类型: | Through Hole |
| 供应商设备包: | TO-264 |
| 包/箱: | TO-264-3, TO-264AA |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
IPP60R600E6Rochester Electronics |
N-CHANNEL POWER MOSFET |
|
STP14NK50ZSTMicroelectronics |
MOSFET N-CH 500V 14A TO220AB |
|
SUD08P06-155L-GE3Vishay / Siliconix |
MOSFET P-CH 60V 8.4A TO252 |
|
SIA415DJ-T1-GE3Vishay / Siliconix |
MOSFET P-CH 20V 12A PPAK SC70-6 |
|
SCT2080KEHRC11ROHM Semiconductor |
SICFET N-CH 1200V 40A TO247N |
|
SIR180DP-T1-RE3Vishay / Siliconix |
MOSFET N-CH 60V 32.4A/60A PPAK |
|
IRFP4004PBFIR (Infineon Technologies) |
MOSFET N-CH 40V 195A TO247AC |
|
BUK7506-55B,127Rochester Electronics |
MOSFET N-CH 55V 75A TO220AB |
|
IPAN60R360P7SXKSA1IR (Infineon Technologies) |
MOSFET N-CH 650V 9A TO220 |
|
IRF4104SPBFIR (Infineon Technologies) |
MOSFET N-CH 40V 75A D2PAK |
|
BUK663R7-75C,118Rochester Electronics |
PFET, 120A I(D), 75V, 0.0058OHM, |
|
HUF75345G3Sanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 55V 75A TO247-3 |
|
NTD3813N-1GRochester Electronics |
MOSFET N-CH 16V 9.6A/51A IPAK |
