English
简体中文
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | CoolMOS™ |
| 包裹: | Tube |
| 零件状态: | Active |
| 场效应管类型: | N-Channel |
| 技术: | MOSFET (Metal Oxide) |
| 漏源电压 (vdss): | 650 V |
| 电流 - 连续漏极 (id) @ 25°c: | 31.2A (Tc) |
| 驱动电压（最大 rds on，最小 rds on）: | 10V |
| rds on (max) @ id, vgs: | 110mOhm @ 12.7A, 10V |
| vgs(th) (最大值) @ id: | 4.5V @ 1.3mA |
| 栅极电荷 (qg) (max) @ vgs: | 118 nC @ 10 V |
| vgs (最大值): | ±20V |
| 输入电容 (ciss) (max) @ vds: | 3240 pF @ 100 V |
| 场效应管特征: | - |
| 功耗（最大值）: | 34.7W (Tc) |
| 工作温度: | -55°C ~ 150°C (TJ) |
| 安装类型: | Through Hole |
| 供应商设备包: | PG-TO220 Full Pack |
| 包/箱: | TO-220-3 Full Pack |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
HUF76639S3STSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 100V 51A D2PAK |
|
NVMFS6H852NT1GSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 80V 10A/40A 5DFN |
|
STB7ANM60NSTMicroelectronics |
MOSFET N-CH 600V 5A D2PAK |
|
APT6010B2FLLGRoving Networks / Microchip Technology |
MOSFET N-CH 600V 54A T-MAX |
|
HUF75345S3SRochester Electronics |
MOSFET N-CH 55V 75A D2PAK |
|
DMN33D8LTQ-13Zetex Semiconductors (Diodes Inc.) |
MOSFET N-CH 30V 115MA SOT523 |
|
SIHD5N50D-E3Vishay / Siliconix |
MOSFET N-CH 500V 5.3A DPAK |
|
FDH055N15ASanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 150V 158A TO247-3 |
|
BTS129NKSA1Rochester Electronics |
POWER FIELD-EFFECT TRANSISTOR, 2 |
|
STL56N3LLH5STMicroelectronics |
MOSFET N-CH 30V 56A POWERFLAT |
|
STP7N60M2STMicroelectronics |
MOSFET N-CH 600V 5A TO220 |
|
FQD13N06TMSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 60V 10A DPAK |
|
RUF015N02TLROHM Semiconductor |
MOSFET N-CH 20V 1.5A TUMT3 |
