类型 | 描述 |
---|---|
系列: | HEXFET® |
包裹: | Bulk |
零件状态: | Active |
场效应管类型: | N-Channel |
技术: | MOSFET (Metal Oxide) |
漏源电压 (vdss): | 150 V |
电流 - 连续漏极 (id) @ 25°c: | 23A (Tc) |
驱动电压(最大 rds on,最小 rds on): | 10V |
rds on (max) @ id, vgs: | 70mOhm @ 12A, 10V |
vgs(th) (最大值) @ id: | 4V @ 250µA |
栅极电荷 (qg) (max) @ vgs: | 95 nC @ 10 V |
vgs (最大值): | ±20V |
输入电容 (ciss) (max) @ vds: | 1.3 pF @ 25 V |
场效应管特征: | - |
功耗(最大值): | 94W (Tc) |
工作温度: | -55°C ~ 175°C (TJ) |
安装类型: | Through Hole |
供应商设备包: | TO-220AB |
包/箱: | TO-220-3 |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
FQPF2N80YDTUSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 800V 1.5A TO220F-3 |
|
FDMC5614PSanyo Semiconductor/ON Semiconductor |
MOSFET P-CH 60V 5.7A/13.5A 8MLP |
|
NVTFS6H850NWFTAGSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 80V 11A/68A 8WDFN |
|
PMV65XP,215Nexperia |
MOSFET P-CH 20V 2.8A TO236AB |
|
IXTA220N04T2-7Wickmann / Littelfuse |
MOSFET N-CH 40V 220A TO263-7 |
|
BUK9620-100B,118Nexperia |
MOSFET N-CH 100V 63A D2PAK |
|
FDS3512Sanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 80V 4A 8SOIC |
|
IPP80R1K4P7XKSA1IR (Infineon Technologies) |
MOSFET N-CH 800V 4A TO220-3 |
|
FQU2N90TU-AM002Rochester Electronics |
MOSFET N-CH 900V 1.7A I-PAK |
|
SISA16DN-T1-GE3Vishay / Siliconix |
MOSFET N-CH 30V 16A PPAK1212-8 |
|
CSD25213W10Texas Instruments |
MOSFET P-CH 20V 1.6A 4DSBGA |
|
SIA483DJ-T1-GE3Vishay / Siliconix |
MOSFET P-CH 30V 12A PPAK SC70-6 |
|
STL60N10F7STMicroelectronics |
MOSFET N-CH 100V 46A POWERFLAT |