MOSFET N-CH 80V 19.8A/80.8A PPAK
SENSOR DISTRIBUTOR
类型 | 描述 |
---|---|
系列: | TrenchFET® Gen IV |
包裹: | Tape & Reel (TR)Cut Tape (CT) |
零件状态: | Active |
场效应管类型: | N-Channel |
技术: | MOSFET (Metal Oxide) |
漏源电压 (vdss): | 80 V |
电流 - 连续漏极 (id) @ 25°c: | 19.8A (Ta), 80.8A (Tc) |
驱动电压(最大 rds on,最小 rds on): | 7.5V, 10V |
rds on (max) @ id, vgs: | 5.1mOhm @ 15A, 10V |
vgs(th) (最大值) @ id: | 3.8V @ 250µA |
栅极电荷 (qg) (max) @ vgs: | 69 nC @ 10 V |
vgs (最大值): | ±20V |
输入电容 (ciss) (max) @ vds: | 3030 pF @ 40 V |
场效应管特征: | - |
功耗(最大值): | 5W (Ta), 83W (Tc) |
工作温度: | -55°C ~ 150°C (TJ) |
安装类型: | Surface Mount |
供应商设备包: | PowerPAK® SO-8 |
包/箱: | PowerPAK® SO-8 |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
FDB5645Rochester Electronics |
MOSFET N-CH 60V 80A D2PAK |
|
SCTWA30N120STMicroelectronics |
IC POWER MOSFET 1200V HIP247 |
|
IRF7413ZPBFRochester Electronics |
MOSFET N-CH 30V 13A 8SO |
|
IRFB4410ZGPBFIR (Infineon Technologies) |
MOSFET N-CH 100V 97A TO220AB |
|
CMUDM7001 TR PBFREECentral Semiconductor |
MOSFET N-CH 20V 100MA SOT523 |
|
RCJ510N25TLROHM Semiconductor |
MOSFET N-CH 250V 51A LPTS |
|
FDP2670Rochester Electronics |
MOSFET N-CH 200V 19A TO220-3 |
|
BSC340N08NS3GATMA1IR (Infineon Technologies) |
MOSFET N-CH 80V 7A/23A TDSON-8-5 |
|
SFM9110TFRochester Electronics |
MOSFET P-CH 100V 1A SOT223-4 |
|
NTMFS6B05NT3GSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 100V 16A/104A 5DFN |
|
NTD60N02R-35GRochester Electronics |
MOSFET N-CH 25V 8.5A/32A IPAK |
|
RQ7E110AJTCRROHM Semiconductor |
MOSFET N-CH 30V 11A TSMT8 |
|
IRFH7004TRPBFIR (Infineon Technologies) |
MOSFET N-CH 40V 100A 8PQFN |