类型 | 描述 |
---|---|
系列: | - |
包裹: | Tape & Reel (TR)Cut Tape (CT) |
零件状态: | Active |
场效应管类型: | N-Channel |
技术: | MOSFET (Metal Oxide) |
漏源电压 (vdss): | 60 V |
电流 - 连续漏极 (id) @ 25°c: | 260mA (Ta) |
驱动电压(最大 rds on,最小 rds on): | 4.5V, 10V |
rds on (max) @ id, vgs: | 2.5Ohm @ 240mA, 10V |
vgs(th) (最大值) @ id: | 2.5V @ 250µA |
栅极电荷 (qg) (max) @ vgs: | 0.81 nC @ 5 V |
vgs (最大值): | ±20V |
输入电容 (ciss) (max) @ vds: | 40 pF @ 25 V |
场效应管特征: | - |
功耗(最大值): | 300mW (Tj) |
工作温度: | -55°C ~ 150°C (TJ) |
安装类型: | Surface Mount |
供应商设备包: | SOT-23-3 (TO-236) |
包/箱: | TO-236-3, SC-59, SOT-23-3 |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
PSMN3R2-25YLC,115Rochester Electronics |
MOSFET N-CH 25V 100A LFPAK56 |
|
IRF7457PBFRochester Electronics |
SMPS HEXFET POWER MOSFET |
|
IRFR120ZTRPBFIR (Infineon Technologies) |
MOSFET N-CH 100V 8.7A DPAK |
|
SUD35N10-26P-E3Vishay / Siliconix |
MOSFET N-CH 100V 35A TO252 |
|
APT20M20B2FLLGRoving Networks / Microchip Technology |
MOSFET N-CH 200V 100A T-MAX |
|
BSP129L6327Rochester Electronics |
N-CHANNEL POWER MOSFET |
|
FDMS3600SRochester Electronics |
SMALL SIGNAL FIELD-EFFECT TRANSI |
|
SPB02N60C3Rochester Electronics |
N-CHANNEL POWER MOSFET |
|
IPD12CN10NGATMA1IR (Infineon Technologies) |
MOSFET N-CH 100V 67A TO252-3 |
|
IRFR120TRLPBFVishay / Siliconix |
MOSFET N-CH 100V 7.7A DPAK |
|
NTB30N06Rochester Electronics |
N-CHANNEL POWER MOSFET |
|
SIHP33N60EF-GE3Vishay / Siliconix |
MOSFET N-CH 600V 33A TO220AB |
|
APT12080JVFRRoving Networks / Microchip Technology |
MOSFET N-CH 1200V 15A ISOTOP |