类型 | 描述 |
---|---|
系列: | - |
包裹: | Tape & Reel (TR) |
零件状态: | Active |
场效应管类型: | P-Channel |
技术: | MOSFET (Metal Oxide) |
漏源电压 (vdss): | 12 V |
电流 - 连续漏极 (id) @ 25°c: | 8.2A (Ta) |
驱动电压(最大 rds on,最小 rds on): | 1.8V, 4.5V |
rds on (max) @ id, vgs: | 19mOhm @ 8.2A, 4.5V |
vgs(th) (最大值) @ id: | 900mV @ 250µA |
栅极电荷 (qg) (max) @ vgs: | 100 nC @ 4.5 V |
vgs (最大值): | ±12V |
输入电容 (ciss) (max) @ vds: | 2875 pF @ 6 V |
场效应管特征: | - |
功耗(最大值): | 1.7W (Ta), 12.5W (Tc) |
工作温度: | -55°C ~ 150°C (TJ) |
安装类型: | Surface Mount |
供应商设备包: | DFN2020MD-6 |
包/箱: | 6-UDFN Exposed Pad |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
TP65H480G4JSG-TRTransphorm |
GANFET N-CH 650V 3.6A 3PQFN |
|
HUF75639P3Sanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 100V 56A TO220-3 |
|
FQPF2N30Rochester Electronics |
MOSFET N-CH 300V 1.34A TO220F |
|
DMTH6016LPSQ-13Zetex Semiconductors (Diodes Inc.) |
MOSFET N-CHA 60V 10.6A POWERDI |
|
NTLGF3501NT2GRochester Electronics |
MOSFET N-CH 20V 2.8A 6DFN |
|
FDMC86570LSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 60V 18A/56A POWER33 |
|
DMTH8012LPS-13Zetex Semiconductors (Diodes Inc.) |
MOSFET N-CH 80V 10A PWRDI5060 |
|
AOT125A60LAlpha and Omega Semiconductor, Inc. |
MOSFET N-CH 600V 28A TO220 |
|
IPLK80R2K0P7ATMA1IR (Infineon Technologies) |
MOSFET 800V TDSON-8 |
|
SUD19P06-60-BE3Vishay / Siliconix |
MOSFET P-CH 60V 18.3A DPAK |
|
APT56M50B2Roving Networks / Microchip Technology |
MOSFET N-CH 500V 56A T-MAX |
|
FDMS030N06BSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 60V 22.1A/100A 8PQFN |
|
SIL05N06-TPMicro Commercial Components (MCC) |
MOSFET N-CH 60V 5A SOT23-6 |