类型 | 描述 |
---|---|
系列: | STripFET™ II |
包裹: | Tape & Reel (TR)Cut Tape (CT) |
零件状态: | Active |
场效应管类型: | N-Channel |
技术: | MOSFET (Metal Oxide) |
漏源电压 (vdss): | 60 V |
电流 - 连续漏极 (id) @ 25°c: | 12A (Tc) |
驱动电压(最大 rds on,最小 rds on): | 10V |
rds on (max) @ id, vgs: | 100mOhm @ 6A, 10V |
vgs(th) (最大值) @ id: | 4V @ 250µA |
栅极电荷 (qg) (max) @ vgs: | 12 nC @ 10 V |
vgs (最大值): | ±20V |
输入电容 (ciss) (max) @ vds: | 315 pF @ 25 V |
场效应管特征: | - |
功耗(最大值): | 30W (Tc) |
工作温度: | -55°C ~ 175°C (TJ) |
安装类型: | Surface Mount |
供应商设备包: | DPAK |
包/箱: | TO-252-3, DPak (2 Leads + Tab), SC-63 |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
FDMC6688PSanyo Semiconductor/ON Semiconductor |
MOSFET P-CH 20V 14A/56A 8PQFN |
|
SI4160DY-T1-GE3Vishay / Siliconix |
MOSFET N-CH 30V 25.4A 8SO |
|
IPN65R1K5CEATMA1IR (Infineon Technologies) |
MOSFET N-CH 650V 5.2A SOT223 |
|
FQU4N50TU-WSSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 500V 2.6A IPAK |
|
IPA60R210CFD7XKSA1IR (Infineon Technologies) |
LOW POWER_NEW |
|
FDD6780Rochester Electronics |
MOSFET N-CH 25V 16.5A/30A DPAK |
|
SIHFS9N60A-GE3Vishay / Siliconix |
MOSFET N-CH 600V 9.2A TO263 |
|
TSM70N10CP ROGTSC (Taiwan Semiconductor) |
MOSFET N-CHANNEL 100V 70A TO252 |
|
MCU05N60A-TPMicro Commercial Components (MCC) |
MOSFET N-CH 600V 4.5A DPAK |
|
AUIRFU4104Rochester Electronics |
MOSFET N-CH 40V 42A TO251-3-21 |
|
STF28N60DM2STMicroelectronics |
MOSFET N-CH 600V 21A TO220FP |
|
PMPB40SNA115Rochester Electronics |
POWER FIELD-EFFECT TRANSISTOR |
|
APT20M38BVRGRoving Networks / Microchip Technology |
MOSFET N-CH 200V 67A TO247 |