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| 类型 | 描述 |
|---|---|
| 系列: | * |
| 包裹: | Bulk |
| 零件状态: | Active |
| 场效应管类型: | - |
| 技术: | - |
| 漏源电压 (vdss): | - |
| 电流 - 连续漏极 (id) @ 25°c: | - |
| 驱动电压（最大 rds on，最小 rds on）: | - |
| rds on (max) @ id, vgs: | - |
| vgs(th) (最大值) @ id: | - |
| 栅极电荷 (qg) (max) @ vgs: | - |
| vgs (最大值): | - |
| 输入电容 (ciss) (max) @ vds: | - |
| 场效应管特征: | - |
| 功耗（最大值）: | - |
| 工作温度: | - |
| 安装类型: | - |
| 供应商设备包: | - |
| 包/箱: | - |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
IXTT6N120Wickmann / Littelfuse |
MOSFET N-CH 1200V 6A TO268 |
|
NTJS4405NT1GSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 25V 1A SC88/SC70-6 |
|
IMZ120R045M1XKSA1IR (Infineon Technologies) |
SICFET N-CH 1200V 52A TO247-4 |
|
CSD18534Q5ATTexas Instruments |
MOSFET N-CHANNEL 60V 50A 8VSON |
|
SN7002WH6433Rochester Electronics |
SMALL SIGNAL FIELD-EFFECT TRANSI |
|
RQ6E030ATTCRROHM Semiconductor |
MOSFET P-CH 30V 3A TSMT6 |
|
IPW60R070CFD7XKSA1IR (Infineon Technologies) |
MOSFET N-CH 650V 31A TO247-3 |
|
PMV20XNERNexperia |
MOSFET N-CH 30V 5.7A TO236AB |
|
SI1404BDH-T1-GE3Vishay / Siliconix |
MOSFET N-CH 30V 1.9A/2.37A SC70 |
|
STD16N60M2STMicroelectronics |
MOSFET N-CH 600V 12A DPAK |
|
IRFD220Rochester Electronics |
0.8A 200V 0.800 OHM N-CHANNEL |
|
TSM70NB1R4CP ROGTSC (Taiwan Semiconductor) |
MOSFET N-CHANNEL 700V 3A TO252 |
|
FQP16N25CRochester Electronics |
MOSFET N-CH 250V 15.6A TO220-3 |
