类型 | 描述 |
---|---|
系列: | * |
包裹: | Bulk |
零件状态: | Active |
场效应管类型: | - |
技术: | - |
漏源电压 (vdss): | - |
电流 - 连续漏极 (id) @ 25°c: | - |
驱动电压(最大 rds on,最小 rds on): | - |
rds on (max) @ id, vgs: | - |
vgs(th) (最大值) @ id: | - |
栅极电荷 (qg) (max) @ vgs: | - |
vgs (最大值): | - |
输入电容 (ciss) (max) @ vds: | - |
场效应管特征: | - |
功耗(最大值): | - |
工作温度: | - |
安装类型: | - |
供应商设备包: | - |
包/箱: | - |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
RQ6E030ATTCRROHM Semiconductor |
MOSFET P-CH 30V 3A TSMT6 |
|
IPW60R070CFD7XKSA1IR (Infineon Technologies) |
MOSFET N-CH 650V 31A TO247-3 |
|
PMV20XNERNexperia |
MOSFET N-CH 30V 5.7A TO236AB |
|
SI1404BDH-T1-GE3Vishay / Siliconix |
MOSFET N-CH 30V 1.9A/2.37A SC70 |
|
STD16N60M2STMicroelectronics |
MOSFET N-CH 600V 12A DPAK |
|
IRFD220Rochester Electronics |
0.8A 200V 0.800 OHM N-CHANNEL |
|
TSM70NB1R4CP ROGTSC (Taiwan Semiconductor) |
MOSFET N-CHANNEL 700V 3A TO252 |
|
FQP16N25CRochester Electronics |
MOSFET N-CH 250V 15.6A TO220-3 |
|
TK14A65W5,S5XToshiba Electronic Devices and Storage Corporation |
MOSFET N-CH 650V 13.7A TO220SIS |
|
PN3685Rochester Electronics |
MOSFET N-CH TO-92 |
|
IPI023NE7N3GRochester Electronics |
N-CHANNEL POWER MOSFET |
|
RUF025N02FRATLROHM Semiconductor |
MOSFET N-CH 20V 2.5A TUMT3 |
|
IRLR014TRLPBFVishay / Siliconix |
MOSFET N-CH 60V 7.7A DPAK |