类型 | 描述 |
---|---|
系列: | QFET® |
包裹: | Tube |
零件状态: | Active |
场效应管类型: | N-Channel |
技术: | MOSFET (Metal Oxide) |
漏源电压 (vdss): | 800 V |
电流 - 连续漏极 (id) @ 25°c: | 10A (Tc) |
驱动电压(最大 rds on,最小 rds on): | 10V |
rds on (max) @ id, vgs: | 1.1Ohm @ 5A, 10V |
vgs(th) (最大值) @ id: | 5V @ 250µA |
栅极电荷 (qg) (max) @ vgs: | 58 nC @ 10 V |
vgs (最大值): | ±30V |
输入电容 (ciss) (max) @ vds: | 2800 pF @ 25 V |
场效应管特征: | - |
功耗(最大值): | 240W (Tc) |
工作温度: | -55°C ~ 150°C (TJ) |
安装类型: | Through Hole |
供应商设备包: | TO-3P |
包/箱: | TO-3P-3, SC-65-3 |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
IRFP254BRochester Electronics |
N-CHANNEL POWER MOSFET |
|
SCH1335-TL-HRochester Electronics |
MOSFET P-CH 12V 2.5A 6SCH |
|
R5009FNJTLROHM Semiconductor |
MOSFET N-CH 500V 9A LPTS |
|
IXTF200N10TWickmann / Littelfuse |
MOSFET N-CH 100V 90A I4PAC |
|
TK110U65Z,RQToshiba Electronic Devices and Storage Corporation |
DTMOS VI TOLL PD=190W F=1MHZ |
|
NTP8G206NGRochester Electronics |
GANFET N-CH 600V 17A TO220-3 |
|
SIHB18N60E-GE3Vishay / Siliconix |
MOSFET N-CH 600V 18A TO263 |
|
AOT270ALAlpha and Omega Semiconductor, Inc. |
MOSFET N-CH 75V 21.5A/140A TO220 |
|
RM8N700TIRectron USA |
MOSFET N-CHANNEL 700V 8A TO220F |
|
TPH1400ANH,L1QToshiba Electronic Devices and Storage Corporation |
MOSFET N CH 100V 24A 8-SOP |
|
IRLR8729TRLPBFRochester Electronics |
IRLR8729 - 20V-30V N-CHANNEL |
|
FDB8160Rochester Electronics |
MOSFET N-CH 30V 80A D2PAK |
|
NTF3055-100T1G-IRH1Sanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 60V 3A SOT223 |