English
简体中文
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | - |
| 包裹: | Tube |
| 零件状态: | Active |
| 场效应管类型: | N-Channel |
| 技术: | MOSFET (Metal Oxide) |
| 漏源电压 (vdss): | 700 V |
| 电流 - 连续漏极 (id) @ 25°c: | 8A (Tj) |
| 驱动电压（最大 rds on，最小 rds on）: | 10V |
| rds on (max) @ id, vgs: | 600mOhm @ 4A, 10V |
| vgs(th) (最大值) @ id: | 3.5V @ 250µA |
| 栅极电荷 (qg) (max) @ vgs: | - |
| vgs (最大值): | ±30V |
| 输入电容 (ciss) (max) @ vds: | 680 pF @ 50 V |
| 场效应管特征: | - |
| 功耗（最大值）: | 31.7W (Tc) |
| 工作温度: | -55°C ~ 150°C (TJ) |
| 安装类型: | Through Hole |
| 供应商设备包: | TO-220F |
| 包/箱: | TO-220-3 Full Pack |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
TPH1400ANH,L1QToshiba Electronic Devices and Storage Corporation |
MOSFET N CH 100V 24A 8-SOP |
|
IRLR8729TRLPBFRochester Electronics |
IRLR8729 - 20V-30V N-CHANNEL |
|
FDB8160Rochester Electronics |
MOSFET N-CH 30V 80A D2PAK |
|
NTF3055-100T1G-IRH1Sanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 60V 3A SOT223 |
|
SQJ142ELP-T1_GE3Vishay / Siliconix |
MOSFET N-CH 40V 175A PPAK SO-8 |
|
CMPDM202PH TRCentral Semiconductor |
MOSFET P-CH 20V 2.3A SOT-23F |
|
SUM10250E-GE3Vishay / Siliconix |
MOSFET N-CH 250V 63.5A D2PAK |
|
STB70NF3LLT4STMicroelectronics |
MOSFET N-CH 30V 70A D2PAK |
|
IPW65R110CFDFKSA2IR (Infineon Technologies) |
MOSFET N-CH 650V 31.2A TO247-3 |
|
SCT3060ARC14ROHM Semiconductor |
SICFET N-CH 650V 39A TO247-4L |
|
IRFBC20PBFVishay / Siliconix |
MOSFET N-CH 600V 2.2A TO220AB |
|
BUK7E1R9-40E,127Nexperia |
MOSFET N-CH 40V 120A I2PAK |
|
IPL60R2K1C6SATMA1Rochester Electronics |
600V COOLMOS N-CHANNEL POWER MOS |
