TVS DIODE 160V 259V DO214AB
TVS DIODE 12.8V 21.2V DO214AA
MOSFET N-CH 30V 2A 3MCPH
IC AMP CLASS AB MONO 3W 8HVSON
类型 | 描述 |
---|---|
系列: | - |
包裹: | Tape & Reel (TR)Cut Tape (CT) |
零件状态: | Active |
场效应管类型: | N-Channel |
技术: | MOSFET (Metal Oxide) |
漏源电压 (vdss): | 30 V |
电流 - 连续漏极 (id) @ 25°c: | 2A (Ta) |
驱动电压(最大 rds on,最小 rds on): | 1.8V, 4.5V |
rds on (max) @ id, vgs: | 165mOhm @ 1A, 4.5V |
vgs(th) (最大值) @ id: | - |
栅极电荷 (qg) (max) @ vgs: | 1.7 nC @ 4.5 V |
vgs (最大值): | ±12V |
输入电容 (ciss) (max) @ vds: | 130 pF @ 10 V |
场效应管特征: | - |
功耗(最大值): | 800mW (Ta) |
工作温度: | 150°C (TJ) |
安装类型: | Surface Mount |
供应商设备包: | 3-MCPH |
包/箱: | 3-SMD, Flat Lead |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
IRFS3806TRLPBFIR (Infineon Technologies) |
MOSFET N-CH 60V 43A D2PAK |
|
FDS8638Sanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 40V 18A 8SOIC |
|
IPP034N03LGXKSA1IR (Infineon Technologies) |
MOSFET N-CH 30V 80A TO220-3 |
|
STP6NK90ZSTMicroelectronics |
MOSFET N-CH 900V 5.8A TO220AB |
|
NTMFS4C35NT1GSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 30V 12.4A 5DFN |
|
R6018ANJTLROHM Semiconductor |
MOSFET N-CH 600V 18A LPTS |
|
IXTU01N100DWickmann / Littelfuse |
MOSFET N-CH 1000V 100MA TO251 |
|
STF6N65K3STMicroelectronics |
MOSFET N-CH 650V 5.4A TO220FP |
|
NTHD3101FT1GSanyo Semiconductor/ON Semiconductor |
MOSFET P-CH 20V 3.2A CHIPFET |
|
IRF630PBF-BE3Vishay / Siliconix |
MOSFET N-CH 200V 9A TO220AB |
|
R5011ANXROHM Semiconductor |
MOSFET N-CH 500V 11A TO220FM |
|
STL25N15F3STMicroelectronics |
MOSFET N-CH 150V 25A POWERFLAT |
|
IPP80N04S3-03Rochester Electronics |
N-CHANNEL POWER MOSFET |