类型 | 描述 |
---|---|
系列: | - |
包裹: | Tape & Reel (TR)Cut Tape (CT) |
零件状态: | Active |
场效应管类型: | P-Channel |
技术: | MOSFET (Metal Oxide) |
漏源电压 (vdss): | 12 V |
电流 - 连续漏极 (id) @ 25°c: | 8A (Ta) |
驱动电压(最大 rds on,最小 rds on): | 1.5V, 4.5V |
rds on (max) @ id, vgs: | 28mOhm @ 5A, 4.5V |
vgs(th) (最大值) @ id: | 1V @ 250µA |
栅极电荷 (qg) (max) @ vgs: | 21 nC @ 4.5 V |
vgs (最大值): | ±8V |
输入电容 (ciss) (max) @ vds: | 1275 pF @ 6 V |
场效应管特征: | - |
功耗(最大值): | - |
工作温度: | -55°C ~ 150°C (TJ) |
安装类型: | Surface Mount |
供应商设备包: | DFN2020-6J |
包/箱: | 6-WDFN Exposed Pad |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
SIJA52ADP-T1-GE3Vishay / Siliconix |
MOSFET N-CH 40V 41.6A/131A PPAK |
|
SI7818DN-T1-GE3Vishay / Siliconix |
MOSFET N-CH 150V 2.2A PPAK1212-8 |
|
BSP315PH6327XTSA1IR (Infineon Technologies) |
MOSFET P-CH 60V 1.17A SOT223-4 |
|
XPH3R114MC,L1XHQToshiba Electronic Devices and Storage Corporation |
MOSFET P-CH 40V 100A 8SOP |
|
IRF6644TRPBFIR (Infineon Technologies) |
MOSFET N-CH 100V 10.3A DIRECTFET |
|
IRF443Rochester Electronics |
MOSFET N-CH 450V 4A TO204AE |
|
STL110N10F7STMicroelectronics |
MOSFET N-CH 100V 107A POWERFLAT |
|
STF7N105K5STMicroelectronics |
MOSFET N-CH 1050V 4A TO220FP |
|
IRL7833STRLPBFIR (Infineon Technologies) |
MOSFET N-CH 30V 150A D2PAK |
|
NVMFS5C468NLAFT1GSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 40V 13A/37A 5DFN |
|
LND150N3-G-P003Roving Networks / Microchip Technology |
MOSFET N-CH 500V 30MA TO92-3 |
|
BS270-D74ZSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 60V 400MA TO92-3 |
|
NTMFS4851NT1GRochester Electronics |
MOSFET N-CH 30V 9.5A/66A 5DFN |