English
简体中文
TVS DIODE 5.8V 10.5V DO214AB
MOSFET N-CH 30V 150A D2PAK
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | HEXFET® |
| 包裹: | Tape & Reel (TR)Cut Tape (CT) |
| 零件状态: | Active |
| 场效应管类型: | N-Channel |
| 技术: | MOSFET (Metal Oxide) |
| 漏源电压 (vdss): | 30 V |
| 电流 - 连续漏极 (id) @ 25°c: | 150A (Tc) |
| 驱动电压（最大 rds on，最小 rds on）: | 4.5V, 10V |
| rds on (max) @ id, vgs: | 3.8mOhm @ 38A, 10V |
| vgs(th) (最大值) @ id: | 2.3V @ 250µA |
| 栅极电荷 (qg) (max) @ vgs: | 47 nC @ 4.5 V |
| vgs (最大值): | ±20V |
| 输入电容 (ciss) (max) @ vds: | 4170 pF @ 15 V |
| 场效应管特征: | - |
| 功耗（最大值）: | 140W (Tc) |
| 工作温度: | -55°C ~ 175°C (TJ) |
| 安装类型: | Surface Mount |
| 供应商设备包: | D2PAK |
| 包/箱: | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
NVMFS5C468NLAFT1GSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 40V 13A/37A 5DFN |
|
LND150N3-G-P003Roving Networks / Microchip Technology |
MOSFET N-CH 500V 30MA TO92-3 |
|
BS270-D74ZSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 60V 400MA TO92-3 |
|
NTMFS4851NT1GRochester Electronics |
MOSFET N-CH 30V 9.5A/66A 5DFN |
|
BUK7S0R9-40HJNexperia |
MOSFET N-CH 40V 375A LFPAK88 |
|
SCH1301-TL-ERochester Electronics |
MOSFET P-CH 12V 2.4A 6SCH |
|
AO6402AAlpha and Omega Semiconductor, Inc. |
MOSFET N-CH 30V 7.5A 6TSOP |
|
IPU95R3K7P7AKMA1IR (Infineon Technologies) |
MOSFET N-CH 950V 2A TO251-3 |
|
MCT04P06-TPMicro Commercial Components (MCC) |
MOSFET P-CH 60V 3.5A SOT223 |
|
IXTA32P05T-TRLWickmann / Littelfuse |
MOSFET P-CH 50V 32A TO263 |
|
BUK794R1-40BT,127Rochester Electronics |
PFET, 75A I(D), 40V, 0.0041OHM, |
|
IXFH26N100XWickmann / Littelfuse |
MOSFET N-CH 1000V 26A TO247 |
|
IPB65R125C7ATMA2IR (Infineon Technologies) |
MOSFET N-CH 650V 18A TO263-3 |