







AUTOMOTIVE HEXFET N CHANNEL
DIODE GEN PURP 100V 1A DO214AC
TRANS PREBIAS DUAL NPN SMINI6
PTC RESET FUSE 8V 1.1A 1812
| 类型 | 描述 |
|---|---|
| 系列: | * |
| 包裹: | Bulk |
| 零件状态: | Active |
| 场效应管类型: | - |
| 技术: | - |
| 漏源电压 (vdss): | - |
| 电流 - 连续漏极 (id) @ 25°c: | - |
| 驱动电压(最大 rds on,最小 rds on): | - |
| rds on (max) @ id, vgs: | - |
| vgs(th) (最大值) @ id: | - |
| 栅极电荷 (qg) (max) @ vgs: | - |
| vgs (最大值): | - |
| 输入电容 (ciss) (max) @ vds: | - |
| 场效应管特征: | - |
| 功耗(最大值): | - |
| 工作温度: | - |
| 安装类型: | - |
| 供应商设备包: | - |
| 包/箱: | - |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
|
|
APT50M50L2LLGRoving Networks / Microchip Technology |
MOSFET N-CH 500V 89A 264 MAX |
|
|
FQA65N20Sanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 200V 65A TO3PN |
|
|
FDD044AN03LRochester Electronics |
MOSFET N-CH 30V 21A/35A TO252AA |
|
|
PMPB10ENZNexperia |
MOSFET N-CH 30V 10A DFN2020MD-6 |
|
|
SQS840EN-T1_GE3Vishay / Siliconix |
MOSFET N-CH 40V 12A PPAK1212-8 |
|
|
FDU6680Rochester Electronics |
MOSFET N-CH 30V 12A/46A IPAK |
|
|
FDP12N50NZRochester Electronics |
POWER FIELD-EFFECT TRANSISTOR, 1 |
|
|
2SK3043Panasonic |
MOSFET N-CH 450V 5A TO220D-A1 |
|
|
SI1403BDL-T1-E3Vishay / Siliconix |
MOSFET P-CH 20V 1.4A SC70-6 |
|
|
IRLR110TRLPBFVishay / Siliconix |
MOSFET N-CH 100V 4.3A DPAK |
|
|
IPD50R380CEBTMA1IR (Infineon Technologies) |
MOSFET N-CH 500V 9.9A TO252-3 |
|
|
STFU16N65M2STMicroelectronics |
MOSFET N-CH 650V 11A TO220FP |
|
|
BSS123NH6433XTMA1IR (Infineon Technologies) |
MOSFET N-CH 100V 190MA SOT23-3 |