类型 | 描述 |
---|---|
系列: | TrenchFET® |
包裹: | Tape & Reel (TR)Cut Tape (CT) |
零件状态: | Active |
场效应管类型: | P-Channel |
技术: | MOSFET (Metal Oxide) |
漏源电压 (vdss): | 20 V |
电流 - 连续漏极 (id) @ 25°c: | 1.4A (Ta) |
驱动电压(最大 rds on,最小 rds on): | 2.5V, 4.5V |
rds on (max) @ id, vgs: | 150mOhm @ 1.5A, 4.5V |
vgs(th) (最大值) @ id: | 1.3V @ 250µA |
栅极电荷 (qg) (max) @ vgs: | 4.5 nC @ 4.5 V |
vgs (最大值): | ±12V |
输入电容 (ciss) (max) @ vds: | - |
场效应管特征: | - |
功耗(最大值): | 568mW (Ta) |
工作温度: | -55°C ~ 150°C (TJ) |
安装类型: | Surface Mount |
供应商设备包: | SC-70-6 (SOT-363) |
包/箱: | 6-TSSOP, SC-88, SOT-363 |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
IRLR110TRLPBFVishay / Siliconix |
MOSFET N-CH 100V 4.3A DPAK |
|
IPD50R380CEBTMA1IR (Infineon Technologies) |
MOSFET N-CH 500V 9.9A TO252-3 |
|
STFU16N65M2STMicroelectronics |
MOSFET N-CH 650V 11A TO220FP |
|
BSS123NH6433XTMA1IR (Infineon Technologies) |
MOSFET N-CH 100V 190MA SOT23-3 |
|
TN5325N3-G-P002Roving Networks / Microchip Technology |
MOSFET N-CH 250V 215MA TO92-3 |
|
QS5U23TRROHM Semiconductor |
MOSFET P-CH 20V 1.5A TSMT5 |
|
NX7002BK215Rochester Electronics |
SMALL SIGNAL N-CHANNEL MOSFET |
|
BSC093N04LSGATMA1IR (Infineon Technologies) |
MOSFET N-CH 40V 13A/49A TDSON |
|
DMN6070SFCL-7Zetex Semiconductors (Diodes Inc.) |
MOSFET N-CH 60V 3A X1-DFN1616-6 |
|
MTP10N40ERochester Electronics |
N-CHANNEL POWER MOSFET |
|
BUK6D120-40EXNexperia |
MOSFET N-CH 40V 2.9A/5.7A 6DFN |
|
STB100N6F7STMicroelectronics |
MOSFET N-CH 60V 100A D2PAK |
|
AOW482Alpha and Omega Semiconductor, Inc. |
MOSFET N-CH 80V 11A/105A TO262 |