FIXED IND 150UH 560MA 1.27 OHM
CIR BRKR THERM-MAG 1A 480/277V
MOSFET N-CH 100V 4.3A DPAK
类型 | 描述 |
---|---|
系列: | - |
包裹: | Tape & Reel (TR) |
零件状态: | Active |
场效应管类型: | N-Channel |
技术: | MOSFET (Metal Oxide) |
漏源电压 (vdss): | 100 V |
电流 - 连续漏极 (id) @ 25°c: | 4.3A (Tc) |
驱动电压(最大 rds on,最小 rds on): | 4V, 5V |
rds on (max) @ id, vgs: | 540mOhm @ 2.6A, 5V |
vgs(th) (最大值) @ id: | 2V @ 250µA |
栅极电荷 (qg) (max) @ vgs: | 6.1 nC @ 5 V |
vgs (最大值): | ±10V |
输入电容 (ciss) (max) @ vds: | 250 pF @ 25 V |
场效应管特征: | - |
功耗(最大值): | 2.5W (Ta), 25W (Tc) |
工作温度: | -55°C ~ 150°C (TJ) |
安装类型: | Surface Mount |
供应商设备包: | D-Pak |
包/箱: | TO-252-3, DPak (2 Leads + Tab), SC-63 |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
IPD50R380CEBTMA1IR (Infineon Technologies) |
MOSFET N-CH 500V 9.9A TO252-3 |
|
STFU16N65M2STMicroelectronics |
MOSFET N-CH 650V 11A TO220FP |
|
BSS123NH6433XTMA1IR (Infineon Technologies) |
MOSFET N-CH 100V 190MA SOT23-3 |
|
TN5325N3-G-P002Roving Networks / Microchip Technology |
MOSFET N-CH 250V 215MA TO92-3 |
|
QS5U23TRROHM Semiconductor |
MOSFET P-CH 20V 1.5A TSMT5 |
|
NX7002BK215Rochester Electronics |
SMALL SIGNAL N-CHANNEL MOSFET |
|
BSC093N04LSGATMA1IR (Infineon Technologies) |
MOSFET N-CH 40V 13A/49A TDSON |
|
DMN6070SFCL-7Zetex Semiconductors (Diodes Inc.) |
MOSFET N-CH 60V 3A X1-DFN1616-6 |
|
MTP10N40ERochester Electronics |
N-CHANNEL POWER MOSFET |
|
BUK6D120-40EXNexperia |
MOSFET N-CH 40V 2.9A/5.7A 6DFN |
|
STB100N6F7STMicroelectronics |
MOSFET N-CH 60V 100A D2PAK |
|
AOW482Alpha and Omega Semiconductor, Inc. |
MOSFET N-CH 80V 11A/105A TO262 |
|
HUF76107P3Rochester Electronics |
N-CHANNEL POWER MOSFET |