English
简体中文
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | - |
| 包裹: | Tape & Reel (TR)Cut Tape (CT) |
| 零件状态: | Not For New Designs |
| 场效应管类型: | P-Channel |
| 技术: | MOSFET (Metal Oxide) |
| 漏源电压 (vdss): | 50 V |
| 电流 - 连续漏极 (id) @ 25°c: | 130mA (Ta) |
| 驱动电压（最大 rds on，最小 rds on）: | 5V |
| rds on (max) @ id, vgs: | 10Ohm @ 100mA, 5V |
| vgs(th) (最大值) @ id: | 2V @ 250µA |
| 栅极电荷 (qg) (max) @ vgs: | 2.2 nC @ 10 V |
| vgs (最大值): | ±20V |
| 输入电容 (ciss) (max) @ vds: | 36 pF @ 5 V |
| 场效应管特征: | - |
| 功耗（最大值）: | 225mW (Ta) |
| 工作温度: | -55°C ~ 150°C (TJ) |
| 安装类型: | Surface Mount |
| 供应商设备包: | SOT-23-3 (TO-236) |
| 包/箱: | TO-236-3, SC-59, SOT-23-3 |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
IPS65R400CEAKMA1Rochester Electronics |
IPS65R400 - 650V AND 700V COOLMO |
|
NTP190N65S3HFSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 650V 20A TO220-3 |
|
DMN3025LFV-7Zetex Semiconductors (Diodes Inc.) |
MOSFET N-CH 30V 25A POWERDI3333 |
|
IPD50N12S3L15ATMA1Rochester Electronics |
IPD50N12 - 120V-300V N-CHANNEL A |
|
IRFR5410TRRPBFIR (Infineon Technologies) |
MOSFET P-CH 100V 13A DPAK |
|
IRFB11N50APBF-BE3Vishay / Siliconix |
MOSFET N-CH 500V 11A TO220AB |
|
RSJ151P10TLROHM Semiconductor |
MOSFET P-CH 100V 15A LPTS |
|
CXDM3069N TR PBFREECentral Semiconductor |
MOSFET N-CH 30V 6.9A SOT-89 |
|
IXTK82N25PWickmann / Littelfuse |
MOSFET N-CH 250V 82A TO264 |
|
STW12NK80ZSTMicroelectronics |
MOSFET N-CH 800V 10.5A TO247-3 |
|
AUIRFU1010ZRochester Electronics |
MOSFET N-CH 55V 42A TO251-3 |
|
IPP80P03P4L04AKSA1IR (Infineon Technologies) |
MOSFET P-CH 30V 80A TO220-3 |
|
RU1J002YNTCLROHM Semiconductor |
MOSFET N-CH 50V 200MA UMT3F |
