







MOSFET N-CH 800V 10.5A TO247-3
CONN BACKSHELL W/CLAMP SZ 11 BLK
CONN RCPT FMALE 41POS CRIMP
IC TRANSCEIVER FULL 3/5 28SOIC
| 类型 | 描述 |
|---|---|
| 系列: | SuperMESH™ |
| 包裹: | Tube |
| 零件状态: | Active |
| 场效应管类型: | N-Channel |
| 技术: | MOSFET (Metal Oxide) |
| 漏源电压 (vdss): | 800 V |
| 电流 - 连续漏极 (id) @ 25°c: | 10.5A (Tc) |
| 驱动电压(最大 rds on,最小 rds on): | 10V |
| rds on (max) @ id, vgs: | 750mOhm @ 5.25A, 10V |
| vgs(th) (最大值) @ id: | 4.5V @ 100µA |
| 栅极电荷 (qg) (max) @ vgs: | 87 nC @ 10 V |
| vgs (最大值): | ±30V |
| 输入电容 (ciss) (max) @ vds: | 2620 pF @ 25 V |
| 场效应管特征: | - |
| 功耗(最大值): | 190W (Tc) |
| 工作温度: | -55°C ~ 150°C (TJ) |
| 安装类型: | Through Hole |
| 供应商设备包: | TO-247-3 |
| 包/箱: | TO-247-3 |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
|
|
AUIRFU1010ZRochester Electronics |
MOSFET N-CH 55V 42A TO251-3 |
|
|
IPP80P03P4L04AKSA1IR (Infineon Technologies) |
MOSFET P-CH 30V 80A TO220-3 |
|
|
RU1J002YNTCLROHM Semiconductor |
MOSFET N-CH 50V 200MA UMT3F |
|
|
IPB60R120C7ATMA1IR (Infineon Technologies) |
MOSFET N-CH 650V 19A TO263-3 |
|
|
IXFJ26N50P3Wickmann / Littelfuse |
MOSFET N-CH 500V 14A TO247 |
|
|
AOTF256LAlpha and Omega Semiconductor, Inc. |
MOSFET N-CH 150V 3A/12A TO220-3F |
|
|
SISH110DN-T1-GE3Vishay / Siliconix |
MOSFET N-CH 20V 13.5A PPAK |
|
|
SFI9510TURochester Electronics |
P-CHANNEL POWER MOSFET |
|
|
CSD17382F4Texas Instruments |
MOSFET N-CH 30V 2.3A 3PICOSTAR |
|
|
R6009KNXROHM Semiconductor |
MOSFET N-CH 600V 9A TO220FM |
|
|
DMTH3004LPSQ-13Zetex Semiconductors (Diodes Inc.) |
MOSFET N-CH 30V PWRDI5060 |
|
|
SQ4182EY-T1_GE3Vishay / Siliconix |
MOSFET N-CHANNEL 30V 32A 8SOIC |
|
|
IXTX200N10L2Wickmann / Littelfuse |
MOSFET N-CH 100V 200A PLUS247-3 |