CAP TANT 50000UF 20% 6.3V AXIAL
MOSFET N-CH 30V PWRDI5060
类型 | 描述 |
---|---|
系列: | Automotive, AEC-Q101 |
包裹: | Tape & Reel (TR) |
零件状态: | Active |
场效应管类型: | N-Channel |
技术: | MOSFET (Metal Oxide) |
漏源电压 (vdss): | 30 V |
电流 - 连续漏极 (id) @ 25°c: | 22A (Ta), 145A (Tc) |
驱动电压(最大 rds on,最小 rds on): | 4.5V, 10V |
rds on (max) @ id, vgs: | 3.8mOhm @ 20A, 10V |
vgs(th) (最大值) @ id: | 3V @ 250µA |
栅极电荷 (qg) (max) @ vgs: | 43.7 nC @ 15 V |
vgs (最大值): | +20V, -16V |
输入电容 (ciss) (max) @ vds: | 2370 pF @ 15 V |
场效应管特征: | - |
功耗(最大值): | 136W (Tc) |
工作温度: | -55°C ~ 175°C (TJ) |
安装类型: | Surface Mount |
供应商设备包: | PowerDI5060-8 |
包/箱: | 8-PowerTDFN |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
SQ4182EY-T1_GE3Vishay / Siliconix |
MOSFET N-CHANNEL 30V 32A 8SOIC |
|
IXTX200N10L2Wickmann / Littelfuse |
MOSFET N-CH 100V 200A PLUS247-3 |
|
AOB66916LAlpha and Omega Semiconductor, Inc. |
MOSFET N-CH 100V 35.5/120A TO263 |
|
STFH18N60M2STMicroelectronics |
MOSFET N-CH 600V 13A TO220FP |
|
TP2522N8-GRoving Networks / Microchip Technology |
MOSFET P-CH 220V 260MA TO243AA |
|
PMN34UP,115Rochester Electronics |
MOSFET P-CH 20V 5A 6TSOP |
|
SIHP18N50C-E3Vishay / Siliconix |
MOSFET N-CH 500V 18A TO220AB |
|
IRF243Rochester Electronics |
16A, 150V, 0.22OHM, N-CHANNEL PO |
|
NP50P06KDG-E1-AYRenesas Electronics America |
MOSFET P-CH 60V 50A TO263 |
|
IPB80N06S4L07ATMA1Rochester Electronics |
MOSFET N-CH 60V 80A TO263-3 |
|
DMP3160L-7Zetex Semiconductors (Diodes Inc.) |
MOSFET P-CH 30V 2.7A SOT23-3 |
|
IRFP350ARochester Electronics |
N-CHANNEL POWER MOSFET |
|
IRFS41N15DTRLPRochester Electronics |
HEXFET POWER MOSFET |