English
简体中文
RES 4.32K OHM 0.25% 1/8W 0805
PFET, 63A I(D), 100V, 0.022OHM,
DIODE FAST RECOVERY 400V 30A TO-
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | TrenchMOS™ |
| 包裹: | Tube |
| 零件状态: | Active |
| 场效应管类型: | N-Channel |
| 技术: | MOSFET (Metal Oxide) |
| 漏源电压 (vdss): | 100 V |
| 电流 - 连续漏极 (id) @ 25°c: | 63A (Tc) |
| 驱动电压（最大 rds on，最小 rds on）: | 4.5V, 10V |
| rds on (max) @ id, vgs: | 19mOhm @ 25A, 10V |
| vgs(th) (最大值) @ id: | 2V @ 1mA |
| 栅极电荷 (qg) (max) @ vgs: | - |
| vgs (最大值): | ±10V |
| 输入电容 (ciss) (max) @ vds: | 6.385 pF @ 25 V |
| 场效应管特征: | - |
| 功耗（最大值）: | 200W (Tc) |
| 工作温度: | -55°C ~ 175°C (TJ) |
| 安装类型: | Through Hole |
| 供应商设备包: | TO-220AB |
| 包/箱: | TO-220-3 |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
FDU3N40TURochester Electronics |
POWER FIELD-EFFECT TRANSISTOR, 2 |
|
SI1330EDL-T1-BE3Vishay / Siliconix |
MOSFET N-CH 60V 240MA SC70-3 |
|
NVMFS6H858NWFT1GSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 80V 8.4A/29A 5DFN |
|
SQ1440EH-T1_GE3Vishay / Siliconix |
MOSFET N-CH 60V 1.7A SC70-6 |
|
MMDF7N02ZR2Rochester Electronics |
SMALL SIGNAL N-CHANNEL MOSFET |
|
STB6NK90ZT4STMicroelectronics |
MOSFET N-CH 900V 5.8A D2PAK |
|
TK25E60X,S1XToshiba Electronic Devices and Storage Corporation |
MOSFET N-CH 600V 25A TO220 |
|
DMTH4001SPS-13Zetex Semiconductors (Diodes Inc.) |
MOSFET N-CH 40V 100A PWRDI |
|
CSD17312Q5Texas Instruments |
MOSFET N-CH 30V 38A/100A 8VSON |
|
NTHS4501NT1Rochester Electronics |
MOSFET N-CH 30V 4.9A CHIPFET |
|
STW24N60M6STMicroelectronics |
MOSFET N-CH 600V TO247 |
|
FQPF65N06Sanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 60V 40A TO220F |
|
DMG4468LK3-13Zetex Semiconductors (Diodes Inc.) |
MOSFET N-CH 30V 9.7A TO252-3 |