English
简体中文
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | HEXFET® |
| 包裹: | Bulk |
| 零件状态: | Active |
| 场效应管类型: | N-Channel |
| 技术: | MOSFET (Metal Oxide) |
| 漏源电压 (vdss): | 30 V |
| 电流 - 连续漏极 (id) @ 25°c: | 43A (Tc) |
| 驱动电压（最大 rds on，最小 rds on）: | 4.5V, 10V |
| rds on (max) @ id, vgs: | 13.8mOhm @ 15A, 10V |
| vgs(th) (最大值) @ id: | 2.25V @ 250µA |
| 栅极电荷 (qg) (max) @ vgs: | 11 nC @ 4.5 V |
| vgs (最大值): | ±20V |
| 输入电容 (ciss) (max) @ vds: | 780 pF @ 15 V |
| 场效应管特征: | - |
| 功耗（最大值）: | 40W (Tc) |
| 工作温度: | -55°C ~ 175°C (TJ) |
| 安装类型: | Surface Mount |
| 供应商设备包: | D-Pak |
| 包/箱: | TO-252-3, DPak (2 Leads + Tab), SC-63 |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
AON6260Alpha and Omega Semiconductor, Inc. |
MOSFET N-CH 60V 41A/85A 8DFN |
|
FDI150N10Sanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 100V 57A I2PAK |
|
PH8230E,115Rochester Electronics |
POWER FIELD-EFFECT TRANSISTOR, 6 |
|
APT58F50JRoving Networks / Microchip Technology |
MOSFET N-CH 500V 58A ISOTOP |
|
FCP170N60Rochester Electronics |
MOSFET N-CH 600V 22A TO220-3 |
|
NTLUS3A18PZCTAGRochester Electronics |
MOSFET P-CH 20V 5.1A 6UDFN |
|
IPP50R399CPXKSA1Rochester Electronics |
COOLMOS N-CHANNEL POWER MOSFET |
|
RM100N30DFRectron USA |
MOSFET N-CHANNEL 30V 100A 8DFN |
|
DMTH43M8LFG-13Zetex Semiconductors (Diodes Inc.) |
MOSFET N-CH 40V PWRDI3333 |
|
IPL60R210P6AUMA1Rochester Electronics |
MOSFET N-CH 600V 19.2A 4VSON |
|
FQPF47P06Sanyo Semiconductor/ON Semiconductor |
MOSFET P-CH 60V 30A TO220F |
|
IPP062NE7N3GRochester Electronics |
IPP062NE7 - 12V-300V N-CHANNEL P |
|
STP7N95K3STMicroelectronics |
MOSFET N-CH 950V 7.2A TO220-3 |
