English
简体中文
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | - |
| 包裹: | Tape & Reel (TR)Cut Tape (CT) |
| 零件状态: | Active |
| 场效应管类型: | P-Channel |
| 技术: | MOSFET (Metal Oxide) |
| 漏源电压 (vdss): | 20 V |
| 电流 - 连续漏极 (id) @ 25°c: | 660mA (Tj) |
| 驱动电压（最大 rds on，最小 rds on）: | 4.5V |
| rds on (max) @ id, vgs: | 950mOhm @ 500mA, 10V |
| vgs(th) (最大值) @ id: | 800mV @ 250µA |
| 栅极电荷 (qg) (max) @ vgs: | - |
| vgs (最大值): | ±6V |
| 输入电容 (ciss) (max) @ vds: | 170 pF @ 16 V |
| 场效应管特征: | - |
| 功耗（最大值）: | 150mW |
| 工作温度: | -55°C ~ 150°C (TJ) |
| 安装类型: | Surface Mount |
| 供应商设备包: | SOT-723 |
| 包/箱: | SOT-723 |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
DMN2028UVT-7Zetex Semiconductors (Diodes Inc.) |
MOSFET N-CH 20V 6.2A TSOT-26 |
|
NTF5P03T3Rochester Electronics |
MOSFET P-CH 30V 3.7A SOT223 |
|
IRF123Rochester Electronics |
N-CHANNEL HERMETIC MOS HEXFET |
|
IPBE65R099CFD7AATMA1IR (Infineon Technologies) |
MOSFET N-CH 650V 24A TO263-7 |
|
NVTFS5124PLTWGSanyo Semiconductor/ON Semiconductor |
MOSFET P-CH 60V 2.4A 8WDFN |
|
TK7A50D(STA4,Q,M)Toshiba Electronic Devices and Storage Corporation |
MOSFET N-CH 500V 7A TO220SIS |
|
IXTP4N70X2MWickmann / Littelfuse |
MOSFET N-CH 700V 4A TO220 |
|
FDC655ANRochester Electronics |
MOSFET N-CH 30V 6.3A SUPERSOT6 |
|
STB26N60M2STMicroelectronics |
MOSFET N-CHANNEL 600V 20A D2PAK |
|
TPIC5421LDWRochester Electronics |
N-CHANNEL POWER MOSFET |
|
CPH6341-M-TL-WSanyo Semiconductor/ON Semiconductor |
MOSFET P-CH 30V 5A CPH6 |
|
APT12057LFLLGRoving Networks / Microchip Technology |
MOSFET N-CH 1200V 22A TO264 |
|
IPD50R650CEAUMA1IR (Infineon Technologies) |
MOSFET N-CH 500V 9A TO252-3 |
