English
简体中文
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | - |
| 包裹: | Tape & Reel (TR)Cut Tape (CT) |
| 零件状态: | Active |
| 场效应管类型: | N-Channel |
| 技术: | MOSFET (Metal Oxide) |
| 漏源电压 (vdss): | 25 V |
| 电流 - 连续漏极 (id) @ 25°c: | 700mA (Ta) |
| 驱动电压（最大 rds on，最小 rds on）: | 2.7V, 4.5V |
| rds on (max) @ id, vgs: | 350mOhm @ 600mA, 4.5V |
| vgs(th) (最大值) @ id: | 1.5V @ 250µA |
| 栅极电荷 (qg) (max) @ vgs: | 1.5 nC @ 4.5 V |
| vgs (最大值): | ±8V |
| 输入电容 (ciss) (max) @ vds: | 60 pF @ 10 V |
| 场效应管特征: | - |
| 功耗（最大值）: | 280mW (Tj) |
| 工作温度: | -55°C ~ 150°C (TJ) |
| 安装类型: | Surface Mount |
| 供应商设备包: | SC-70-3 (SOT323) |
| 包/箱: | SC-70, SOT-323 |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
SI7159DP-T1-GE3Vishay / Siliconix |
MOSFET P-CH 30V 30A PPAK SO-8 |
|
IRF7406PBFRochester Electronics |
MOSFET P-CH 30V 5.8A 8SO |
|
BSB165N15NZ3GXUMA1IR (Infineon Technologies) |
MOSFET N-CH 150V 9A/45A 2WDSON |
|
BSP88L6327Rochester Electronics |
N-CHANNEL POWER MOSFET |
|
PMPB100ENEXNexperia |
MOSFET DFN2020MD-6 |
|
FCD9N60NTMSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 600V 9A DPAK |
|
PSMN013-30YLC,115Nexperia |
MOSFET N-CH 30V 32A LFPAK56 |
|
NTR1P02T1Rochester Electronics |
MOSFET P-CH 20V 1A SOT23-3 |
|
MTD3302T4Rochester Electronics |
SMALL SIGNAL N-CHANNEL MOSFET |
|
FDMS86350ET80Sanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 80V 25A/198A POWER56 |
|
NVMFS6B05NT1GRochester Electronics |
MOSFET N-CH 100V 5DFN |
|
BSC032NE2LSATMA1IR (Infineon Technologies) |
MOSFET N-CH 25V 22A/84A TDSON |
|
FDP5500Rochester Electronics |
N CHANNEL ULTRAFET 55V, 80A, 7M |
