English
简体中文
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | OptiMOS™ |
| 包裹: | Tape & Reel (TR)Cut Tape (CT) |
| 零件状态: | Active |
| 场效应管类型: | N-Channel |
| 技术: | MOSFET (Metal Oxide) |
| 漏源电压 (vdss): | 25 V |
| 电流 - 连续漏极 (id) @ 25°c: | 22A (Ta), 84A (Tc) |
| 驱动电压（最大 rds on，最小 rds on）: | 4.5V, 10V |
| rds on (max) @ id, vgs: | 3.2mOhm @ 30A, 10V |
| vgs(th) (最大值) @ id: | 2V @ 250µA |
| 栅极电荷 (qg) (max) @ vgs: | 16 nC @ 10 V |
| vgs (最大值): | ±20V |
| 输入电容 (ciss) (max) @ vds: | 1200 pF @ 12 V |
| 场效应管特征: | - |
| 功耗（最大值）: | 2.8W (Ta), 78W (Tc) |
| 工作温度: | -55°C ~ 150°C (TJ) |
| 安装类型: | Surface Mount |
| 供应商设备包: | PG-TDSON-8-6 |
| 包/箱: | 8-PowerTDFN |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
FDP5500Rochester Electronics |
N CHANNEL ULTRAFET 55V, 80A, 7M |
|
SIHB33N60ET5-GE3Vishay / Siliconix |
MOSFET N-CH 600V 33A TO263 |
|
SSM6J215FE(TE85L,FToshiba Electronic Devices and Storage Corporation |
MOSFET P CH 20V 3.4A ES6 |
|
SSM3K37CT,L3FToshiba Electronic Devices and Storage Corporation |
MOSFET N-CH 20V 200MA CST3 |
|
SPA04N80C3XKSA1IR (Infineon Technologies) |
MOSFET N-CH 800V 4A TO220-FP |
|
APT20M18LVRGRoving Networks / Microchip Technology |
MOSFET N-CH 200V 100A TO264 |
|
SIS476DN-T1-GE3Vishay / Siliconix |
MOSFET N-CH 30V 40A PPAK1212-8 |
|
RCJ120N25TLROHM Semiconductor |
MOSFET N-CH 250V 12A LPT |
|
IRF9520PBFVishay / Siliconix |
MOSFET P-CH 100V 6.8A TO220AB |
|
PSMN3R5-80PSRochester Electronics |
NOW NEXPERIA PSMN3R5-80PS - POWE |
|
IRF135B203Rochester Electronics |
IRF135B - 12V-300V N-CHANNEL POW |
|
IRFR310PBFVishay / Siliconix |
MOSFET N-CH 400V 1.7A DPAK |
|
NVB60N06T4GRochester Electronics |
MOSFET N-CH 60V 60A D2PAK |
