类型 | 描述 |
---|---|
系列: | PowerMESH™ |
包裹: | Tube |
零件状态: | Active |
场效应管类型: | N-Channel |
技术: | MOSFET (Metal Oxide) |
漏源电压 (vdss): | 800 V |
电流 - 连续漏极 (id) @ 25°c: | 4.3A (Tc) |
驱动电压(最大 rds on,最小 rds on): | 10V |
rds on (max) @ id, vgs: | 2.4Ohm @ 2.15A, 10V |
vgs(th) (最大值) @ id: | 4.5V @ 100µA |
栅极电荷 (qg) (max) @ vgs: | 45.5 nC @ 10 V |
vgs (最大值): | ±30V |
输入电容 (ciss) (max) @ vds: | 910 pF @ 25 V |
场效应管特征: | - |
功耗(最大值): | 30W (Tc) |
工作温度: | -55°C ~ 150°C (TJ) |
安装类型: | Through Hole |
供应商设备包: | TO-220FP |
包/箱: | TO-220-3 Full Pack |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
SI2305-TPMicro Commercial Components (MCC) |
MOSFET P-CH 8V 4.1A SOT23 |
|
CXDM4060P TR PBFREECentral Semiconductor |
MOSFET P-CH 40V 6A SOT-89 |
|
SI3457CDV-T1-GE3Vishay / Siliconix |
MOSFET P-CH 30V 5.1A 6TSOP |
|
FDP18N20FSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 200V 18A TO220-3 |
|
FDU6644Rochester Electronics |
N-CHANNEL POWER MOSFET |
|
CMS70N04H8-HFComchip Technology |
MOSFET N-CH 40V 70A DFN5X6 |
|
SFT1443-TL-WSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 100V 9A DPAK/TP-FA |
|
SUM65N20-30-E3Vishay / Siliconix |
MOSFET N-CH 200V 65A TO263 |
|
SIJ128LDP-T1-GE3Vishay / Siliconix |
MOSFET N-CH 80V 10.2A/25.5A PPAK |
|
RRH090P03TB1ROHM Semiconductor |
MOSFET P-CH 30V 9A 8SOP |
|
FQPF12P20XDTURochester Electronics |
MOSFET P-CH 200V 7.3A TO-220F |
|
IPAW60R280P7SE8228XKSA1IR (Infineon Technologies) |
MOSFET N-CH 600V 12A TO220 |
|
PMV450ENEARNexperia |
MOSFET N-CH 60V 800MA TO236AB |